Infineon CoolMOSTM P7 MOSFET, 18 A, 600 V Enhancement, 3-Pin PG-TO-220
- RS-stocknr.:
- 273-7459
- Fabrikantnummer:
- IPAN60R180P7SXKSA1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 2 eenheden)*
€ 4,15
(excl. BTW)
€ 5,022
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
Op voorraad
- 440 stuk(s) klaar voor verzending vanaf een andere locatie
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 2 - 8 | € 2,075 | € 4,15 |
| 10 - 18 | € 1,735 | € 3,47 |
| 20 - 98 | € 1,70 | € 3,40 |
| 100 - 248 | € 1,36 | € 2,72 |
| 250 + | € 1,315 | € 2,63 |
*prijsindicatie
- RS-stocknr.:
- 273-7459
- Fabrikantnummer:
- IPAN60R180P7SXKSA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 18A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Series | CoolMOSTM P7 | |
| Package Type | PG-TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.18Ω | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 26W | |
| Typical Gate Charge Qg @ Vgs | 25nC | |
| Minimum Operating Temperature | -40°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 18A | ||
Maximum Drain Source Voltage Vds 600V | ||
Series CoolMOSTM P7 | ||
Package Type PG-TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.18Ω | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 26W | ||
Typical Gate Charge Qg @ Vgs 25nC | ||
Minimum Operating Temperature -40°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Infineon MOSFET of Cool MOS 7th generation platform is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction principle and pioneered by Infineon Technologies. The 600V Cool MOS P7 series is the successor to the Cool MOS P6 series. It combines the benefits of a fast switching SJ MOSFET with excellent ease of use, example very low ringing tendency, outstanding robustness of body diode against hard commutation and excellent ESD capability. Furthermore, extremely low switching and conduction losses makes witching applications even more efficient, more compact and much cooler.
Ease of use
Excellent ESD robustness
Simplified thermal management
Significant reduction of switching
Suitable for hard and soft switching
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