Infineon BSO080P03S H OptiMOSTM-P Type P-Channel MOSFET, -14.9 A, -30 V Enhancement, 8-Pin PG-DSO-8 BSO080P03SHXUMA1
- RS-stocknr.:
- 273-5241
- Fabrikantnummer:
- BSO080P03SHXUMA1
- Fabrikant:
- Infineon
Subtotaal (1 rol van 2500 eenheden)*
€ 1.670,00
(excl. BTW)
€ 2.020,00
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
Tijdelijk niet op voorraad
- Verzending vanaf 17 maart 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per rol* |
|---|---|---|
| 2500 + | € 0,668 | € 1.670,00 |
*prijsindicatie
- RS-stocknr.:
- 273-5241
- Fabrikantnummer:
- BSO080P03SHXUMA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | -14.9A | |
| Maximum Drain Source Voltage Vds | -30V | |
| Package Type | PG-DSO-8 | |
| Series | BSO080P03S H OptiMOSTM-P | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 2.5W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 25 V | |
| Forward Voltage Vf | -0.82V | |
| Typical Gate Charge Qg @ Vgs | -102nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | IEC61249-2-21, JEDEC, RoHS | |
| Width | 40 mm | |
| Length | 40mm | |
| Height | 1.5mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id -14.9A | ||
Maximum Drain Source Voltage Vds -30V | ||
Package Type PG-DSO-8 | ||
Series BSO080P03S H OptiMOSTM-P | ||
Mount Type Surface | ||
Pin Count 8 | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 2.5W | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 25 V | ||
Forward Voltage Vf -0.82V | ||
Typical Gate Charge Qg @ Vgs -102nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals IEC61249-2-21, JEDEC, RoHS | ||
Width 40 mm | ||
Length 40mm | ||
Height 1.5mm | ||
Automotive Standard No | ||
The Infineon MOSFET is a P channel power MOSFET. These products consistently meet the highest quality and performance demands in key specifications for power system design such as on state resistance and figure of merit characteristics. It has 150 degree Celsius operating temperature and qualified according JEDEC for target applications.
Logic level
Halogen free
RoHS compliant
Pb free lead plating
Enhancement mode
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