Infineon ISP Type P-Channel P-Channel, 1.9 A, 60 V Enhancement, 3-Pin PG-SOT223
- RS-stocknr.:
- 273-3042
- Fabrikantnummer:
- ISP26DP06NMSATMA1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 25 eenheden)*
€ 9,10
(excl. BTW)
€ 11,00
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
Op voorraad
- 2.925 stuk(s) klaar voor verzending vanaf een andere locatie
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 25 - 25 | € 0,364 | € 9,10 |
| 50 - 75 | € 0,336 | € 8,40 |
| 100 - 225 | € 0,313 | € 7,83 |
| 250 - 975 | € 0,306 | € 7,65 |
| 1000 + | € 0,30 | € 7,50 |
*prijsindicatie
- RS-stocknr.:
- 273-3042
- Fabrikantnummer:
- ISP26DP06NMSATMA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | P-Channel | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 1.9A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | PG-SOT223 | |
| Series | ISP | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 260mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 10.8nC | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 5W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS, IEC61249-2-21 | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type P-Channel | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 1.9A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type PG-SOT223 | ||
Series ISP | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 260mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 10.8nC | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 5W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS, IEC61249-2-21 | ||
Automotive Standard No | ||
The Infineon P-channel MOSFET in normal and logic level, reducing design complexity in medium and low power applications.
Easy interface to MCU
Fast switching
Avalanche ruggedness
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