Infineon HEXFET Type N-Channel MOSFET, 183 A, 75 V Enhancement, 3-Pin TO-263
- RS-stocknr.:
- 273-3032
- Fabrikantnummer:
- IRFS7734TRLPBF
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Bekijk bulkkortingSubtotaal (1 verpakking van 2 eenheden)*
€ 4,97
(excl. BTW)
€ 6,014
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 90,00
Op voorraad
- Plus verzending 398 stuk(s) vanaf 17 juli 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 2 - 8 | € 2,485 | € 4,97 |
| 10 - 48 | € 2,42 | € 4,84 |
| 50 - 98 | € 2,345 | € 4,69 |
| 100 - 248 | € 2,29 | € 4,58 |
| 250 + | € 2,24 | € 4,48 |
*prijsindicatie
- RS-stocknr.:
- 273-3032
- Fabrikantnummer:
- IRFS7734TRLPBF
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 183A | |
| Maximum Drain Source Voltage Vds | 75V | |
| Series | HEXFET | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 3.5mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 270nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 290W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS, Lead-Free | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 183A | ||
Maximum Drain Source Voltage Vds 75V | ||
Series HEXFET | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 3.5mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 270nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 290W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS, Lead-Free | ||
The Infineon single N-channel HEXFET power MOSFET in a D2-Pak package is optimized for broadest availability from distribution partners.
Product qualification according to JEDEC standard
Softer body diode compared to previous silicon generation
Industry standard surface-mount power package
Gerelateerde Links
- Infineon HEXFET Type N-Channel MOSFET, 183 A, 75 V Enhancement, 3-Pin TO-263 IRFS7734TRLPBF
- Infineon HEXFET Type N-Channel Power MOSFET, 75 A, 75 V Enhancement, 3-Pin TO-263
- Infineon HEXFET Type N-Channel Power MOSFET, 75 A, 75 V Enhancement, 3-Pin TO-263 IRF2807ZSTRLPBF
- Infineon HEXFET Type N-Channel MOSFET, 269 A, 75 V Enhancement, 7-Pin TO-263
- Infineon HEXFET Type N-Channel MOSFET, 106 A, 75 V Enhancement, 3-Pin TO-263
- Infineon HEXFET Type N-Channel MOSFET, 100 A, 75 V Enhancement, 3-Pin TO-263
- Infineon HEXFET Type N-Channel MOSFET, 128 A, 75 V Enhancement, 3-Pin TO-263
- Infineon HEXFET Type N-Channel MOSFET, 246 A, 75 V Enhancement, 3-Pin TO-263