Infineon IPT Type N-Channel Power MOSFET, 23 A, 0.82 V Enhancement, 8-Pin PG-HSOF-8 IPT60R022S7XTMA1
- RS-stocknr.:
- 273-2795
- Fabrikantnummer:
- IPT60R022S7XTMA1
- Fabrikant:
- Infineon
Subtotaal (1 rol van 2000 eenheden)*
€ 14.146,00
(excl. BTW)
€ 17.116,00
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
Tijdelijk niet op voorraad
- Verzending vanaf 26 februari 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per rol* |
|---|---|---|
| 2000 + | € 7,073 | € 14.146,00 |
*prijsindicatie
- RS-stocknr.:
- 273-2795
- Fabrikantnummer:
- IPT60R022S7XTMA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Channel Type | Type N | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 23A | |
| Maximum Drain Source Voltage Vds | 0.82V | |
| Package Type | PG-HSOF-8 | |
| Series | IPT | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 22mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 150nC | |
| Maximum Power Dissipation Pd | 390W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 0.82V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS, JEDEC | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Channel Type Type N | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 23A | ||
Maximum Drain Source Voltage Vds 0.82V | ||
Package Type PG-HSOF-8 | ||
Series IPT | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 22mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 150nC | ||
Maximum Power Dissipation Pd 390W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 0.82V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS, JEDEC | ||
Automotive Standard No | ||
The Infineon MOSFET is a 600V CoolMOS SJ S7 power device. It enables the best price performance for low frequency switching applications. The CoolMOS S7 boasts the lowest Rdson values for a HV SJ MOSFET, with distinctive increase of energy efficiency. CoolMOS S7 is optimized for static switching and high current applications. It is an ideal fit for solid state relay and circuit breaker designs as well as for line rectification in SMPS and inverter topologies.
Total Pb free
RoHS compliant
Faster switching times
Easy visual inspection leads
Minimized conduction losses
More compact and easier design
Gerelateerde Links
- Infineon IPT Type N-Channel Power MOSFET, 23 A, 0.82 V Enhancement, 8-Pin PG-HSOF-8
- Infineon IPT Type N-Channel MOSFET, 23 A, 600 V Enhancement, 8-Pin PG-HSOF-8 IPT60T022S7XTMA1
- Infineon IPT Type N-Channel MOSFET, 8 A, 600 V Enhancement, 8-Pin PG-HSOF-8 IPT60T065S7XTMA1
- Infineon IPT Type N-Channel MOSFET, 169 A, 80 V Enhancement, 8-Pin PG-HSOF-8
- Infineon IPT Type N-Channel MOSFET, 313 A, 60 V Enhancement, 8-Pin PG-HSOF-8
- Infineon IPT Type N-Channel MOSFET, 87 A, 200 V Enhancement, 8-Pin PG-HSOF-8 IPT129N20NM6ATMA1
- Infineon IPT Type N-Channel MOSFET, 18 A, 600 V Enhancement, 8-Pin PG-HSOF-8 IPT60R180CM8XTMA1
- Infineon IPT Type N-Channel MOSFET, 13 A, 600 V Enhancement, 8-Pin PG-HSOF-8 IPT60T040S7XTMA1