Infineon OptiMOS Type N-Channel MOSFET, 57 A, 650 V Enhancement, 10-Pin PG-HDSOP-10-1
- RS-stocknr.:
- 273-2788
- Fabrikantnummer:
- IPDD60R050G7XTMA1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Subtotaal (1 eenheid)*
€ 7,62
(excl. BTW)
€ 9,22
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
Op voorraad
- Plus verzending 100 stuk(s) vanaf 05 januari 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk |
|---|---|
| 1 - 49 | € 7,62 |
| 50 - 99 | € 6,93 |
| 100 - 249 | € 6,34 |
| 250 - 499 | € 5,85 |
| 500 + | € 5,45 |
*prijsindicatie
- RS-stocknr.:
- 273-2788
- Fabrikantnummer:
- IPDD60R050G7XTMA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 57A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | PG-HDSOP-10-1 | |
| Series | OptiMOS | |
| Mount Type | Surface | |
| Pin Count | 10 | |
| Maximum Drain Source Resistance Rds | 50mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 68nC | |
| Maximum Power Dissipation Pd | 278W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 57A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type PG-HDSOP-10-1 | ||
Series OptiMOS | ||
Mount Type Surface | ||
Pin Count 10 | ||
Maximum Drain Source Resistance Rds 50mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 68nC | ||
Maximum Power Dissipation Pd 278W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Infineon MOSFET is easy to use and has the highest quality standards. It is possibility to increase economies of scales by usage in PFC and PWM topologies in the application. It reducing parasitic source inductance by Kelvin Source improves efficiency by faster switching and ease of use due to less ringing.
Total Pb free
RoHS compliant
Easy visual inspection leads
Improve thermal performance
Suitable for hard and soft switching
Gerelateerde Links
- Infineon OptiMOS Type N-Channel MOSFET, 57 A, 650 V Enhancement, 10-Pin PG-HDSOP-10-1 IPDD60R050G7XTMA1
- Infineon OptiMOS Type N-Channel MOSFET, 72 A, 650 V Enhancement, 10-Pin PG-HDSOP-10 IPDD60R037CM8XTMA1
- Infineon OptiMOS Type N-Channel MOSFET, 21 A, 650 V Enhancement, 10-Pin PG-HDSOP-10 IPDD60R180CM8XTMA1
- Infineon CoolSiC Type N-Channel MOSFET, 57 A, 650 V Enhancement, 16-Pin PG-HDSOP-16 IMLT65R040M2HXTMA1
- Infineon OptiMOS Type N-Channel MOSFET, 331 A, 120 V Enhancement, 16-Pin PG-HDSOP-16 IPTC017N12NM6ATMA1
- Infineon OptiMOS Type N-Channel MOSFET, 454 A, 60 V Enhancement, 16-Pin PG-HDSOP-16 IPTC007N06NM5ATMA1
- Infineon OptiMOS Type N-Channel MOSFET, 120 A, 120 V Enhancement, 16-Pin PG-HDSOP-16-1 IAUTN12S5N018TATMA1
- Infineon OptiMOS Type N-Channel MOSFET, 503 A, 60 V Enhancement, 16-Pin PG-HDSOP-16-1 IAUTN06S5N008TATMA1
