Vishay SQJ Type N-Channel MOSFET, 66 A, 80 V Enhancement, 4-Pin PowerPAK SO-8L SQJ186ELP-T1_GE3
- RS-stocknr.:
- 268-8366
- Fabrikantnummer:
- SQJ186ELP-T1_GE3
- Fabrikant:
- Vishay
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 10 eenheden)*
€ 8,56
(excl. BTW)
€ 10,36
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
Tijdelijk niet op voorraad
- Verzending vanaf 10 augustus 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 10 - 40 | € 0,856 | € 8,56 |
| 50 - 90 | € 0,838 | € 8,38 |
| 100 - 240 | € 0,666 | € 6,66 |
| 250 - 990 | € 0,653 | € 6,53 |
| 1000 + | € 0,436 | € 4,36 |
*prijsindicatie
- RS-stocknr.:
- 268-8366
- Fabrikantnummer:
- SQJ186ELP-T1_GE3
- Fabrikant:
- Vishay
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 66A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Package Type | PowerPAK SO-8L | |
| Series | SQJ | |
| Mount Type | PCB | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 0.032Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Maximum Power Dissipation Pd | 135W | |
| Typical Gate Charge Qg @ Vgs | 45nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.1V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Length | 4.9mm | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 66A | ||
Maximum Drain Source Voltage Vds 80V | ||
Package Type PowerPAK SO-8L | ||
Series SQJ | ||
Mount Type PCB | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 0.032Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Maximum Power Dissipation Pd 135W | ||
Typical Gate Charge Qg @ Vgs 45nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.1V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Length 4.9mm | ||
Automotive Standard AEC-Q101 | ||
- Land van herkomst:
- CN
The Vishay automotive N channel TrenchFET generation 4 power MOSFET is lead Pb and halogen free device. It is single configuration device and that has independent of operating temperature.
AEC Q101 qualified
ROHS compliant
UIS tested 100 percent
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