Vishay SQ Type N-Channel MOSFET, 7 A, 60 V Enhancement, 6-Pin TSOP-6 SQ3426CEV-T1_GE3
- RS-stocknr.:
- 268-8351
- Fabrikantnummer:
- SQ3426CEV-T1_GE3
- Fabrikant:
- Vishay
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 25 eenheden)*
€ 12,10
(excl. BTW)
€ 14,65
(incl. BTW)
Voeg 225 eenheden toe voor gratis bezorging
Op voorraad
- Plus verzending 3.000 stuk(s) vanaf 23 februari 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 25 - 25 | € 0,484 | € 12,10 |
| 50 - 75 | € 0,475 | € 11,88 |
| 100 - 225 | € 0,362 | € 9,05 |
| 250 - 975 | € 0,355 | € 8,88 |
| 1000 + | € 0,228 | € 5,70 |
*prijsindicatie
- RS-stocknr.:
- 268-8351
- Fabrikantnummer:
- SQ3426CEV-T1_GE3
- Fabrikant:
- Vishay
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 7A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | TSOP-6 | |
| Series | SQ | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 0.092Ω | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 5W | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Forward Voltage Vf | 0.77V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 12nC | |
| Maximum Operating Temperature | 175°C | |
| Length | 3.05mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 7A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type TSOP-6 | ||
Series SQ | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 0.092Ω | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 5W | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Forward Voltage Vf 0.77V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 12nC | ||
Maximum Operating Temperature 175°C | ||
Length 3.05mm | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
- Land van herkomst:
- CN
The Vishay automotive N channel TrenchFET power MOSFET is lead Pb and halogen free device with single configuration MOSFET and surface mount type device. It is independent of operating temperature.
AEC Q101 qualified
ROHS compliant
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