Vishay SIJH Type N-Channel MOSFET, 174 A, 150 V Enhancement, 4-Pin PowerPAK (8x8L) SIJH5700E-T1-GE3
- RS-stocknr.:
- 268-8325
- Fabrikantnummer:
- SIJH5700E-T1-GE3
- Fabrikant:
- Vishay
Bulkkorting beschikbaar
Subtotaal (1 eenheid)*
€ 6,25
(excl. BTW)
€ 7,56
(incl. BTW)
Voeg 12 eenheden toe voor gratis bezorging
Op voorraad
- Plus verzending 1.870 stuk(s) vanaf 25 februari 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk |
|---|---|
| 1 - 49 | € 6,25 |
| 50 - 99 | € 5,62 |
| 100 - 249 | € 4,61 |
| 250 - 999 | € 4,51 |
| 1000 + | € 3,32 |
*prijsindicatie
- RS-stocknr.:
- 268-8325
- Fabrikantnummer:
- SIJH5700E-T1-GE3
- Fabrikant:
- Vishay
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 174A | |
| Maximum Drain Source Voltage Vds | 150V | |
| Package Type | PowerPAK (8x8L) | |
| Series | SIJH | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 0.0041Ω | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 333W | |
| Typical Gate Charge Qg @ Vgs | 14nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Maximum Operating Temperature | 150°C | |
| Length | 7.9mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 174A | ||
Maximum Drain Source Voltage Vds 150V | ||
Package Type PowerPAK (8x8L) | ||
Series SIJH | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 0.0041Ω | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 333W | ||
Typical Gate Charge Qg @ Vgs 14nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Maximum Operating Temperature 150°C | ||
Length 7.9mm | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- Land van herkomst:
- CN
The Vishay N channel TrenchFET generation 5 power MOSFET is fully lead Pb free device. It is used in applications such as synchronous rectification, motor drive control, battery management.
Very low figure of merit
ROHS compliant
UIS tested 100 percent
Gerelateerde Links
- Vishay SIJH Type N-Channel MOSFET, 174 A, 150 V Enhancement, 4-Pin PowerPAK (8x8L) SIJH5700E-T1-GE3
- Vishay SIJH Type N-Channel MOSFET, 277 A, 100 V Enhancement, 4-Pin 8x8L SIJH5100E-T1-GE3
- Vishay Type N-Channel MOSFET, 37 A, 60 V Depletion, 4-Pin PowerPAK (8x8L) SIJH600E-T1-GE3
- Vishay N-Channel 80 V Type N-Channel MOSFET, 299 A, 80 V, 4-Pin PowerPAK (8x8L) SIJH800E-T1-GE3
- Vishay Type N-Channel MOSFET, 37 A, 60 V Depletion, 4-Pin PowerPAK (8x8L)
- Vishay E Type N-Channel MOSFET, 32 A, 650 V Enhancement, 4-Pin PowerPAK SiHH080N60E-T1-GE3
- Vishay E Type N-Channel MOSFET, 25 A, 600 V Enhancement, 4-Pin PowerPAK SIHH26N60E-T1-GE3
- Vishay N-Channel 80 V Type N-Channel MOSFET, 299 A, 80 V, 4-Pin PowerPAK (8x8L)