Vishay SIHK Type N-Channel MOSFET, 21 A, 650 V Enhancement, 8-Pin PowerPAK 10 x 12 SIHK125N60EF-T1GE3

RS-stocknr.:: 268-8312
Fabrikantnummer:: SIHK125N60EF-T1GE3
Fabrikant:: Vishay

Vishay SIHK Type N-Channel MOSFET, 21 A, 650 V Enhancement, 8-Pin PowerPAK 10 x 12 SIHK125N60EF-T1GE3

Subtotaal (1 rol van 2000 eenheden)*

€ 4.320,00

(excl. BTW)

€ 5.220,00

(incl. BTW)

GRATIS bezorging voor bestellingen vanaf € 90,00

Tijdelijk niet op voorraad

Verzending vanaf 15 februari 2027

Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.

Aantal stuks	Per stuk	Per rol*
2000 +	€ 2,16	€ 4.320,00

*prijsindicatie

RS-stocknr.:: 268-8312
Fabrikantnummer:: SIHK125N60EF-T1GE3
Fabrikant:: Vishay

Specificaties

Datasheets

Wetgeving en conformiteit

Productomschrijving

Zoek vergelijkbare producten door een of meer kenmerken te selecteren.

Alles selecteren	Attribuut	Waarde
	Merk	Vishay
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	21A
	Maximum Drain Source Voltage Vds	650V
	Series	SIHK
	Package Type	PowerPAK 10 x 12
	Mount Type	PCB
	Pin Count	8
	Maximum Drain Source Resistance Rds	0.125Ω
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	45nC
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	132W
	Forward Voltage Vf	1.2V
	Maximum Operating Temperature	150°C
	Length	9.9mm
	Standards/Approvals	RoHS
	Automotive Standard	No

	Alles selecteren
	Merk Vishay
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 21A
	Maximum Drain Source Voltage Vds 650V
	Series SIHK
	Package Type PowerPAK 10 x 12
	Mount Type PCB
	Pin Count 8
	Maximum Drain Source Resistance Rds 0.125Ω
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 45nC
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 132W
	Forward Voltage Vf 1.2V
	Maximum Operating Temperature 150°C
	Length 9.9mm
	Standards/Approvals RoHS
	Automotive Standard No

Datasheet - SIHK125N60EF-T1GE3

Land van herkomst:: CN

Vishay SIHK Series MOSFET, 650V Maximum Drain Source Voltage, 21A Maximum Continuous Drain Current - SIHK125N60EF-T1GE3

This MOSFET is a high-voltage N-channel switching transistor designed for power conversion and control on printed circuit boards. It operates across a wide thermal range and is intended for applications requiring robust voltage handling and moderate current capacity in a PCB-mounted PowerPAK package.

Features and Benefits:

• 650V drain capability for high-voltage switching
• 21A continuous drain current for steady power delivery
• 0.125Ω low Rds(on) to reduce conduction losses
• 132W power dissipation for thermal headroom
• 45nC typical gate charge for predictable switching energy
• 30V gate-source rating for flexible gate drive levels

Applications

• Suitable for switch-mode power supplies in industrial equipment
• Ideal for high-voltage motor-drive front ends
• Used with isolated gate drivers in power converters
• Can be used for power-factor-correction stages
• Suitable for inverter circuits in renewable-energy systems

What package is provided for PCB assembly and thermal management?

The component is supplied in a PowerPAK 10x12 surface-mount package designed for PCB mounting to assist heat transfer to the board and facilitate solder-based thermal paths.

What thermal extremes can the device withstand in operation?

It is specified to function from -55°C up to 150°C, enabling use in environments with substantial temperature variation.

How does the device behave as a gate-driven switch?

It is an enhancement-mode N-channel MOSFET that requires a positive gate-source voltage up to its 30V limit to conduct, and its typical gate charge of 45nC informs switching-energy calculations.

Are there any environmental or regulatory attributes noted?

The device complies with RoHS requirements for restricted substances, aligning with standard electronic component environmental directives.