Vishay SIHH Type N-Channel MOSFET, 13 A, 650 V Enhancement, 4-Pin PowerPAK 8 x 8 SIHH250N60EF-T1GE3

RS-stocknr.:: 268-8303
Fabrikantnummer:: SIHH250N60EF-T1GE3
Fabrikant:: Vishay

Vishay SIHH Type N-Channel MOSFET, 13 A, 650 V Enhancement, 4-Pin PowerPAK 8 x 8 SIHH250N60EF-T1GE3

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€ 11,386

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1000 +	€ 2,665	€ 5,33

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RS-stocknr.:: 268-8303
Fabrikantnummer:: SIHH250N60EF-T1GE3
Fabrikant:: Vishay

Specificaties

Datasheets

Wetgeving en conformiteit

Productomschrijving

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Alles selecteren	Attribuut	Waarde
	Merk	Vishay
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	13A
	Maximum Drain Source Voltage Vds	650V
	Package Type	PowerPAK 8 x 8
	Series	SIHH
	Mount Type	Surface
	Pin Count	4
	Maximum Drain Source Resistance Rds	0.25Ω
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	89W
	Typical Gate Charge Qg @ Vgs	23nC
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	1.2V
	Maximum Operating Temperature	150°C
	Length	8mm
	Standards/Approvals	RoHS
	Automotive Standard	No

	Alles selecteren
	Merk Vishay
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 13A
	Maximum Drain Source Voltage Vds 650V
	Package Type PowerPAK 8 x 8
	Series SIHH
	Mount Type Surface
	Pin Count 4
	Maximum Drain Source Resistance Rds 0.25Ω
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 89W
	Typical Gate Charge Qg @ Vgs 23nC
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 1.2V
	Maximum Operating Temperature 150°C
	Length 8mm
	Standards/Approvals RoHS
	Automotive Standard No

Datasheet - SIHH250N60EF-T1GE3

Land van herkomst:: TW

Vishay SIHH Series MOSFET, 650V Drain Source Voltage, 13A Continuous Drain Current - SIHH250N60EF-T1GE3

This MOSFET is a high-voltage N-channel transistor designed for switching and power conversion in industrial electrical systems. It is intended for surface-mounted assemblies where robust voltage handling and thermal endurance are required, and it operates across a wide temperature range to suit demanding environments.

Features and Benefits:

• 650V drain capability enables high-voltage switching applications • 13A continuous drain current supports substantial load currents • 0.25Ω Rds(on) reduces conduction losses during operation • 23nC typical gate charge allows controlled switching dynamics • 30V maximum gate drive tolerance accommodates standard gate drivers • 89W power dissipation permits sustained thermal loading

Applications

• Suitable for high-voltage power switching in industrial drives • Ideal for switch-mode power supplies requiring high Vds • Used for motor inverter stages handling moderate currents • Can be used for power factor correction modules in plant equipment

What mounting format is required for circuit assembly?

It uses a PowerPAK 8x8 surface package with four pins intended for low-inductance PCB mounting.

How does the device behave under extreme temperatures?

It is specified to operate from -55°C up to 150°C, allowing use in installations with wide thermal variation.

What is the maximum voltage between drain and source?

The maximum drain-source voltage rating is 650V, defining the upper limit for steady-state blocking voltage.

What gate drive limitations should be observed?

The gate-source voltage must not exceed 30V to avoid damaging the gate oxide.

Are there regulatory material restrictions noted?

The component is listed as RoHS-compliant, indicating restriction of certain hazardous substances.