Vishay SIHA Type N-Channel MOSFET, 9 A, 650 V Enhancement, 8-Pin PowerPAK SO-8DC SIHA150N60E-GE3

RS-stocknr.:: 268-8288
Fabrikantnummer:: SIHA150N60E-GE3
Fabrikant:: Vishay

Vishay SIHA Type N-Channel MOSFET, 9 A, 650 V Enhancement, 8-Pin PowerPAK SO-8DC SIHA150N60E-GE3

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500 +	€ 2,725	€ 5,45

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RS-stocknr.:: 268-8288
Fabrikantnummer:: SIHA150N60E-GE3
Fabrikant:: Vishay

Specificaties

Datasheets

Wetgeving en conformiteit

Productomschrijving

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Alles selecteren	Attribuut	Waarde
	Merk	Vishay
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	9A
	Maximum Drain Source Voltage Vds	650V
	Package Type	PowerPAK SO-8DC
	Series	SIHA
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	0.158Ω
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	36nC
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	179W
	Forward Voltage Vf	1.2V
	Maximum Operating Temperature	150°C
	Standards/Approvals	RoHS
	Automotive Standard	No

	Alles selecteren
	Merk Vishay
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 9A
	Maximum Drain Source Voltage Vds 650V
	Package Type PowerPAK SO-8DC
	Series SIHA
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 0.158Ω
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 36nC
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 179W
	Forward Voltage Vf 1.2V
	Maximum Operating Temperature 150°C
	Standards/Approvals RoHS
	Automotive Standard No

Datasheet - SIHA150N60E-GE3

Land van herkomst:: CN

Vishay SIHA Series MOSFET, 650V Drain Source Voltage, 9A Continuous Drain Current - SIHA150N60E-GE3

This MOSFET is a high-voltage N-channel transistor designed for power switching in surface-mount applications. It operates across a broad temperature range and is intended for circuits requiring substantial voltage headroom and moderate continuous current. The device is supplied in a PowerPAK SO-8DC package suitable for compact board layouts.

Features and Benefits:

• 650V drain-to-source rating enables high-voltage switching
• 9A continuous drain current supports moderate power delivery
• 0.158Ω low Rds(on) reduces conduction losses
• 179W power dissipation allows elevated load handling
• 36nC typical gate charge provides predictable switching control
• ±30V gate tolerance permits robust gate-drive margins

Applications

• Suitable for high-voltage power supplies and converters
• Ideal for industrial motor drive switching stages
• Used for server and telecoms power-management modules
• Can be used for LED drivers requiring high-voltage switches
• Appropriate for inverter and UPS power stages

What mounting style does it require for PCB assembly?

It is a surface-mount device supplied in a PowerPAK SO-8DC package, designed for reflow soldering onto PCB land patterns compatible with SO-8DC footprints.

How does it behave in extended temperature environments?

The transistor is rated to operate from -55°C up to 150°C, permitting use in systems exposed to low ambient conditions and elevated internal heating.

What gate-drive constraints should be observed?

The gate-to-source voltage must not exceed ±30V, so gate drivers should be limited within those bounds to prevent gate-oxide stress.

What standard restricts hazardous substances in this component?

The device conforms to RoHS requirements, indicating restrictions on certain hazardous materials during manufacture.