Microchip VP0104 Type P-Channel MOSFET, -500 mA, 40 V MOSFET, 3-Pin TO-92
- RS-stocknr.:
- 264-8949P
- Fabrikantnummer:
- VP0104N3-G
- Fabrikant:
- Microchip
Bulkkorting beschikbaar
Bekijk bulkkortingSubtotaal 50 eenheden (geleverd in een zak)*
€ 45,05
(excl. BTW)
€ 54,50
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 90,00
Beperkte voorraad
- 120 stuk(s) klaar voor verzending vanaf een andere locatie
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Aantal stuks | Per stuk |
|---|---|
| 50 - 90 | € 0,901 |
| 100 - 240 | € 0,716 |
| 250 - 490 | € 0,701 |
| 500 + | € 0,688 |
*prijsindicatie
- RS-stocknr.:
- 264-8949P
- Fabrikantnummer:
- VP0104N3-G
- Fabrikant:
- Microchip
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Microchip | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | -500mA | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | TO-92 | |
| Series | VP0104 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 8Ω | |
| Channel Mode | MOSFET | |
| Maximum Power Dissipation Pd | 1W | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 2V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Microchip | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id -500mA | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type TO-92 | ||
Series VP0104 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 8Ω | ||
Channel Mode MOSFET | ||
Maximum Power Dissipation Pd 1W | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 2V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Microchip P-Channel low threshold, enhancement-mode (normally-off) MOSFET utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
Free from secondary breakdown
Low power drive requirement
Ease of paralleling
Low CISS and fast switching speeds
Excellent thermal stability
Integral source-drain diode
High input impedance and high gain
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