Microchip VN0106 Type N-Channel MOSFET, 350 A, 60 V Enhancement, 3-Pin TO-92 VN0106N3-G
- RS-stocknr.:
- 264-8941
- Fabrikantnummer:
- VN0106N3-G
- Fabrikant:
- Microchip
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 10 eenheden)*
€ 7,10
(excl. BTW)
€ 8,60
(incl. BTW)
Voeg 190 eenheden toe voor gratis bezorging
Op voorraad
- 310 stuk(s) klaar voor verzending vanaf een andere locatie
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 10 - 40 | € 0,71 | € 7,10 |
| 50 - 90 | € 0,696 | € 6,96 |
| 100 - 240 | € 0,40 | € 4,00 |
| 250 - 490 | € 0,39 | € 3,90 |
| 500 + | € 0,38 | € 3,80 |
*prijsindicatie
- RS-stocknr.:
- 264-8941
- Fabrikantnummer:
- VN0106N3-G
- Fabrikant:
- Microchip
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Microchip | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 350A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | VN0106 | |
| Package Type | TO-92 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 1W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Microchip | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 350A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series VN0106 | ||
Package Type TO-92 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 1W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Microchip P-Channel low threshold, enhancement-mode (normally-off) MOSFET utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
Free from secondary breakdown
Low power drive requirement
Ease of paralleling
Low CISS and fast switching speeds
Excellent thermal stability
Integral source-drain diode
High input impedance and high gain
Gerelateerde Links
- Microchip VN0106 Type N-Channel MOSFET, 350 A, 60 V Enhancement, 3-Pin TO-92
- Microchip TN0106 N-Channel MOSFET, 350 mA, 60 V, 3-Pin TO-92 TN0106N3-G
- Microchip VN2210 N-Channel Vertical DMOS FET-Channel Single MOSFETs, 350 mA, 90 V Enhancement Mode, 3-Pin TO-92-3
- Microchip VN1206 N-Channel Vertical DMOS FET-Channel Single MOSFETs, 350 mA, 90 V Enhancement Mode, 3-Pin TO-92-3
- Microchip VN0808 N-Channel Vertical DMOS FET-Channel Single MOSFETs, 350 mA, 90 V Enhancement Mode, 3-Pin TO-92-3
- Microchip VP3203 N-Channel Vertical DMOS FET-Channel Single MOSFETs, 350 mA, 90 V Enhancement Mode, 3-Pin TO-92-3
- Microchip VN0109 N-Channel Vertical DMOS FET-Channel Single MOSFETs, 350 mA, 90 V Enhancement Mode, 3-Pin TO-92-3
- Microchip VN0606 N-Channel Vertical DMOS FET-Channel Single MOSFETs, 350 mA, 90 V Enhancement Mode, 3-Pin TO-92-3