Microchip Type P-Channel MOSFET, 600 mA, 40 V MOSFET, 3-Pin SOT-23
- RS-stocknr.:
- 264-8930P
- Fabrikantnummer:
- TP2104K1-G
- Fabrikant:
- Microchip
Bulkkorting beschikbaar
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€ 31,10
(excl. BTW)
€ 37,65
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 90,00
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- Plus verzending 830 stuk(s) vanaf 12 oktober 2026
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Aantal stuks | Per stuk |
|---|---|
| 50 - 90 | € 0,622 |
| 100 - 240 | € 0,55 |
| 250 - 990 | € 0,539 |
| 1000 + | € 0,527 |
*prijsindicatie
- RS-stocknr.:
- 264-8930P
- Fabrikantnummer:
- TP2104K1-G
- Fabrikant:
- Microchip
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Microchip | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 600mA | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | SOT-23 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Channel Mode | MOSFET | |
| Maximum Power Dissipation Pd | 0.36W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Microchip | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 600mA | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type SOT-23 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Channel Mode MOSFET | ||
Maximum Power Dissipation Pd 0.36W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Microchip P-Channel low threshold, enhancement-mode (normally-off) MOSFET utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
High input impedance and high gain
Low power drive requirement
Ease of paralleling
Low CISS and fast switching speeds
Excellent thermal stability
Integral source-drain diode
Free from secondary breakdown
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