Microchip Type N-Channel MOSFET, 250 mA, 300 V MOSFET, 3-Pin SOT-23 TN2130K1-G
- RS-stocknr.:
- 264-8917
- Fabrikantnummer:
- TN2130K1-G
- Fabrikant:
- Microchip
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 25 eenheden)*
€ 8,10
(excl. BTW)
€ 9,80
(incl. BTW)
Voeg 275 eenheden toe voor gratis bezorging
Op voorraad
- Plus verzending 1.975 stuk(s) vanaf 23 februari 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 25 - 25 | € 0,324 | € 8,10 |
| 50 - 75 | € 0,315 | € 7,88 |
| 100 - 225 | € 0,308 | € 7,70 |
| 250 - 975 | € 0,299 | € 7,48 |
| 1000 + | € 0,292 | € 7,30 |
*prijsindicatie
- RS-stocknr.:
- 264-8917
- Fabrikantnummer:
- TN2130K1-G
- Fabrikant:
- Microchip
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Microchip | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 250mA | |
| Maximum Drain Source Voltage Vds | 300V | |
| Package Type | SOT-23 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Channel Mode | MOSFET | |
| Maximum Power Dissipation Pd | 0.36W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Microchip | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 250mA | ||
Maximum Drain Source Voltage Vds 300V | ||
Package Type SOT-23 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Channel Mode MOSFET | ||
Maximum Power Dissipation Pd 0.36W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Microchip N-Channel low threshold enhancement-mode (normally-off) MOSFET utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
Free from secondary breakdown
Low power drive requirement
Ease of paralleling
Low CISS and fast switching speeds
Excellent thermal stability
Integral source-drain diode
High input impedance and high gain
Gerelateerde Links
- Microchip Type N-Channel MOSFET, 250 mA, 300 V MOSFET, 3-Pin SOT-23
- Microchip Type N-Channel MOSFET, 140 mA, 240 V MOSFET, 3-Pin SOT-23 TN2124K1-G
- Microchip VN2110 Type N-Channel MOSFET, 0.6 A, 100 V MOSFET, 3-Pin SOT-23 VN2110K1-G
- Microchip TN5335 Type N-Channel MOSFET, 230 mA, 350 V MOSFET, 3-Pin SOT-23 TN5335K1-G
- Microchip LND150 Type N-Channel MOSFET, 500 V Depletion, 3-Pin SOT-23 LND150K1-G
- Microchip Type N-Channel MOSFET, 140 mA, 240 V MOSFET, 3-Pin SOT-23
- Microchip VN2110 Type N-Channel MOSFET, 0.6 A, 100 V MOSFET, 3-Pin SOT-23
- Microchip TN5335 Type N-Channel MOSFET, 230 mA, 350 V MOSFET, 3-Pin SOT-23