Microchip TN0610 N-Channel MOSFET, 500 A, 100 V Enhancement, 3-Pin TO-92 TN0610N3-G
- RS-stocknr.:
- 264-8911
- Fabrikantnummer:
- TN0610N3-G
- Fabrikant:
- Microchip
Subtotaal (1 zak van 1000 eenheden)*
€ 1.152,00
(excl. BTW)
€ 1.394,00
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 90,00
Op voorraad
- 1.000 stuk(s) klaar voor verzending vanaf een andere locatie
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per Zak* |
|---|---|---|
| 1000 + | € 1,152 | € 1.152,00 |
*prijsindicatie
- RS-stocknr.:
- 264-8911
- Fabrikantnummer:
- TN0610N3-G
- Fabrikant:
- Microchip
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Microchip | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 500A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | TN0610 | |
| Package Type | TO-92 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Power Dissipation Pd | 1W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Microchip | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 500A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series TN0610 | ||
Package Type TO-92 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Power Dissipation Pd 1W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Microchip N-Channel low threshold enhancement-mode (normally-off) MOSFET utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
Low threshold - 2.0V max.
High input impedance
Low input capacitance - 100pF typical
Fast switching speeds
Low on-resistance
Free from secondary breakdown
Low input and output leakage
Gerelateerde Links
- Microchip TN0610 N-Channel MOSFET, 500 A, 100 V Enhancement, 3-Pin TO-92 TN0610N3-G
- Microchip N-Channel MOSFET, 3 A Enhancement, 3-Pin TO-92 TP0606N3-G
- Microchip N-Channel MOSFET, 230 mA, 60 V Enhancement, 3-Pin TO-92 VN2222LL-G
- Microchip N-Channel MOSFET, 190 mA, 240 V Enhancement, 3-Pin TO-92 VN2410L-G
- Microchip TN5325 N-Channel MOSFET, 10.3 A, 650 V Enhancement, 3-Pin TO-92 TN5325K1-G
- Microchip TN2106 N-Channel MOSFET, 300 mA, 60 V Enhancement, 3-Pin TO-92 TN2106N3-G
- Microchip 2N7000 N-Channel MOSFET, 200 mA, 60 V Enhancement, 3-Pin TO-92 2N7000-G
- Microchip VN10K N-Channel MOSFET, 310 mA, 60 V Enhancement, 3-Pin TO-92 VN10KN3-G