Infineon HEXFET Type N-Channel MOSFET, 16 A, 100 V Enhancement, 3-Pin TO-251 IRFU3910PBF
- RS-stocknr.:
- 262-6776
- Artikelnummer Distrelec:
- 304-41-680
- Fabrikantnummer:
- IRFU3910PBF
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Bekijk bulkkortingSubtotaal (1 verpakking van 10 eenheden)*
€ 6,85
(excl. BTW)
€ 8,29
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 90,00
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Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 10 - 90 | € 0,685 | € 6,85 |
| 100 - 240 | € 0,652 | € 6,52 |
| 250 - 490 | € 0,624 | € 6,24 |
| 500 - 990 | € 0,595 | € 5,95 |
| 1000 + | € 0,377 | € 3,77 |
*prijsindicatie
- RS-stocknr.:
- 262-6776
- Artikelnummer Distrelec:
- 304-41-680
- Fabrikantnummer:
- IRFU3910PBF
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 16A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | TO-251 | |
| Series | HEXFET | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 115mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 52W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 29.3nC | |
| Forward Voltage Vf | 1.3V | |
| Maximum Operating Temperature | 175°C | |
| Length | 6.73mm | |
| Standards/Approvals | RoHS | |
| Height | 2.39mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 16A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type TO-251 | ||
Series HEXFET | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 115mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 52W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 29.3nC | ||
Forward Voltage Vf 1.3V | ||
Maximum Operating Temperature 175°C | ||
Length 6.73mm | ||
Standards/Approvals RoHS | ||
Height 2.39mm | ||
Automotive Standard No | ||
The Infineon power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. It has ultra low on-resistance. It provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
Fast switching
Fully avalanche rated
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