Infineon HEXFET Type N-Channel MOSFET, 2.4 A, 30 V Enhancement, 8-Pin SOIC IRF7503TRPBF
- RS-stocknr.:
- 262-6740
- Artikelnummer Distrelec:
- 304-41-669
- Fabrikantnummer:
- IRF7503TRPBF
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 25 eenheden)*
€ 11,825
(excl. BTW)
€ 14,30
(incl. BTW)
Informatie over voorraden is momenteel niet toegankelijk - Controleer het later nog eens opnieuw
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 25 - 100 | € 0,473 | € 11,83 |
| 125 - 225 | € 0,45 | € 11,25 |
| 250 - 600 | € 0,43 | € 10,75 |
| 625 - 1225 | € 0,284 | € 7,10 |
| 1250 + | € 0,237 | € 5,93 |
*prijsindicatie
- RS-stocknr.:
- 262-6740
- Artikelnummer Distrelec:
- 304-41-669
- Fabrikantnummer:
- IRF7503TRPBF
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 2.4A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | SOIC | |
| Series | HEXFET | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 222mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 1.25W | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.3V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 7.8nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 2.4A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type SOIC | ||
Series HEXFET | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 222mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 1.25W | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.3V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 7.8nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Infineon power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. It has smallest footprint which makes it ideal for applications for where printed circuit board space is at premium.
Ultra low resistance
Available in tape and reel
Very small SOIC package
Gerelateerde Links
- Infineon HEXFET Type N-Channel MOSFET, 2.4 A, 30 V Enhancement, 8-Pin SOIC
- Infineon HEXFET Type N-Channel MOSFET, 7.3 A, 100 V Enhancement, 8-Pin SOIC
- Infineon HEXFET Type N-Channel MOSFET, 18 A, 40 V Enhancement, 8-Pin SOIC
- Infineon HEXFET Type N-Channel MOSFET, 20 A, 30 V Enhancement, 8-Pin SOIC
- Infineon HEXFET Type N-Channel MOSFET, 9.3 A, 80 V Enhancement, 8-Pin SOIC
- Infineon HEXFET Type N-Channel MOSFET, 24 A, 30 V Enhancement, 8-Pin SOIC
- Infineon HEXFET Type N-Channel MOSFET, 11 A, 30 V Enhancement, 8-Pin SOIC
- Infineon HEXFET Type N-Channel MOSFET, 12 A, 60 V Enhancement, 8-Pin SOIC