STMicroelectronics Dual N-Channel MOSFET, 95 V, 5-Pin LBB RF5L15120CB4
- RS-stocknr.:
- 261-5584P
- Fabrikantnummer:
- RF5L15120CB4
- Fabrikant:
- STMicroelectronics
Bulkkorting beschikbaar
Bekijk bulkkortingSubtotaal 10 eenheden (geleverd op een doorlopende strip)*
€ 1.739,20
(excl. BTW)
€ 2.104,40
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 90,00
Op voorraad
- Plus verzending 20 stuk(s) vanaf 10 augustus 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk |
|---|---|
| 10 - 99 | € 173,92 |
| 100 + | € 171,79 |
*prijsindicatie
- RS-stocknr.:
- 261-5584P
- Fabrikantnummer:
- RF5L15120CB4
- Fabrikant:
- STMicroelectronics
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | Dual N | |
| Maximum Drain Source Voltage Vds | 95V | |
| Package Type | LBB | |
| Mount Type | Surface | |
| Pin Count | 5 | |
| Maximum Drain Source Resistance Rds | 1Ω | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Length | 28.95mm | |
| Height | 2.1mm | |
| Standards/Approvals | 2002/95/EC | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type Dual N | ||
Maximum Drain Source Voltage Vds 95V | ||
Package Type LBB | ||
Mount Type Surface | ||
Pin Count 5 | ||
Maximum Drain Source Resistance Rds 1Ω | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Length 28.95mm | ||
Height 2.1mm | ||
Standards/Approvals 2002/95/EC | ||
Automotive Standard No | ||
- Land van herkomst:
- CN
The STMicroelectronics 120 W LDMOS FET, designed for broadband commercial communications, TV broadcast, avionics and industrial applications with frequencies from HF to 1.5 GHz. It can be used in class AB/B and class C for all typical modulation formats.
High efficiency and linear gain operations
Integrated ESD protection
Large positive and negative gate or source voltage range
Excellent thermal stability, low HCI drift
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