STMicroelectronics Type N-Channel MOSFET, 20 A, 3-Pin TO-252 STD65N160M9
- RS-stocknr.:
- 261-5483
- Fabrikantnummer:
- STD65N160M9
- Fabrikant:
- STMicroelectronics
Bulkkorting beschikbaar
Bekijk bulkkortingSubtotaal (1 eenheid)*
€ 3,52
(excl. BTW)
€ 4,26
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 90,00
Tijdelijk niet op voorraad
- Verzending vanaf 06 augustus 2027
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Aantal stuks | Per stuk |
|---|---|
| 1 - 9 | € 3,52 |
| 10 - 99 | € 2,30 |
| 100 - 499 | € 2,26 |
| 500 - 2499 | € 2,23 |
| 2500 + | € 2,20 |
*prijsindicatie
- RS-stocknr.:
- 261-5483
- Fabrikantnummer:
- STD65N160M9
- Fabrikant:
- STMicroelectronics
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | STMicroelectronics | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 20A | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 160mΩ | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 32nC | |
| Maximum Operating Temperature | 150°C | |
| Length | 10.1mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk STMicroelectronics | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 20A | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 160mΩ | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 32nC | ||
Maximum Operating Temperature 150°C | ||
Length 10.1mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
- Land van herkomst:
- CN
The STMicroelectronics N-channel Power MOSFET is based on the most innovative super junction MDmesh M9 technology, suitable for medium/high voltage MOSFETs featuring very low RDS(on) per area. The silicon based M9 technology benefits from a multi-drain manufacturing process which allows an enhanced device structure.
Higher VDSS rating
Excellent switching performance
Easy to drive
100% avalanche tested
Zener protected
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