STMicroelectronics Type N-Channel MOSFET, 64 A, 650 V, 3-Pin ACEPACK SMIT
- RS-stocknr.:
- 261-5481P
- Fabrikantnummer:
- SH68N65DM6AG
- Fabrikant:
- STMicroelectronics
Bulkkorting beschikbaar
Bekijk bulkkortingSubtotaal 10 eenheden (geleverd op een doorlopende strip)*
€ 275,30
(excl. BTW)
€ 333,10
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 90,00
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Aantal stuks | Per stuk |
|---|---|
| 10 - 99 | € 27,53 |
| 100 - 199 | € 27,19 |
| 200 + | € 26,87 |
*prijsindicatie
- RS-stocknr.:
- 261-5481P
- Fabrikantnummer:
- SH68N65DM6AG
- Fabrikant:
- STMicroelectronics
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | STMicroelectronics | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 64A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | ACEPACK SMIT | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 41mΩ | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 116nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk STMicroelectronics | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 64A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type ACEPACK SMIT | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 41mΩ | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 116nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
- Land van herkomst:
- PH
The STMicroelectronics combination of two MOSFETs in a half-bridge topology. The ACEPACK SMIT is a very compact and rugged power module in a surface mount package for easy assembly. The DBC substrate, the ACEPACK SMIT package offers low thermal resistance coupled with an isolated top-side thermal pad. The high design flexibility of the package enables several configurations, including phase legs, boost, and single switch through different combinations of the internal power switches.
Half bridge power module
650 V blocking voltage
Fast recovery body diode
Very low switching energies
Low package inductance
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