STMicroelectronics Type N-Channel MOSFET, 30 A, 650 V Enhancement, 7-Pin Tape & Reel SCT055HU65G3AG
- RS-stocknr.:
- 261-5043P
- Fabrikantnummer:
- SCT055HU65G3AG
- Fabrikant:
- STMicroelectronics
Bulkkorting beschikbaar
Bekijk bulkkortingSubtotaal 10 eenheden (geleverd op een doorlopende strip)*
€ 98,40
(excl. BTW)
€ 119,10
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 90,00
Tijdelijk niet op voorraad
- Verzending vanaf 05 augustus 2027
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk |
|---|---|
| 10 - 99 | € 9,84 |
| 100 - 599 | € 9,72 |
| 600 + | € 9,60 |
*prijsindicatie
- RS-stocknr.:
- 261-5043P
- Fabrikantnummer:
- SCT055HU65G3AG
- Fabrikant:
- STMicroelectronics
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 30A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | Tape & Reel | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 29nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 18.58mm | |
| Height | 3.5mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 30A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type Tape & Reel | ||
Mount Type Surface | ||
Pin Count 7 | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 29nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 18.58mm | ||
Height 3.5mm | ||
Automotive Standard No | ||
- Land van herkomst:
- MA
Automotive-grade silicon carbide Power MOSFET 650 V, 58 mOhm typ., 30 A in an HU3PAK package
The STMicroelectronics silicon carbide power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.
AEC-Q101 qualified
Very low RDS(on) over the entire temperature range
High speed switching performances
Very fast and robust intrinsic body diode
Source sensing pin for increased efficiency
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