Infineon IPT Type N-Channel MOSFET, 190 A, 150 V, 8-Pin TOLG
- RS-stocknr.:
- 260-2673
- Fabrikantnummer:
- IPTG039N15NM5ATMA1
- Fabrikant:
- Infineon
Subtotaal (1 rol van 1800 eenheden)*
€ 6.645,60
(excl. BTW)
€ 8.040,60
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
Tijdelijk niet op voorraad
- Verzending vanaf 03 juli 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per rol* |
|---|---|---|
| 1800 + | € 3,692 | € 6.645,60 |
*prijsindicatie
- RS-stocknr.:
- 260-2673
- Fabrikantnummer:
- IPTG039N15NM5ATMA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 190A | |
| Maximum Drain Source Voltage Vds | 150V | |
| Package Type | TOLG | |
| Series | IPT | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 3.9mΩ | |
| Forward Voltage Vf | 0.81V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 319W | |
| Typical Gate Charge Qg @ Vgs | 74nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS, IEC 61249-2-21 | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 190A | ||
Maximum Drain Source Voltage Vds 150V | ||
Package Type TOLG | ||
Series IPT | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 3.9mΩ | ||
Forward Voltage Vf 0.81V | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 319W | ||
Typical Gate Charge Qg @ Vgs 74nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS, IEC 61249-2-21 | ||
Automotive Standard No | ||
The Infineon MOSFET comes in the improved TO leaded package with gullwing leads having a compatible footprint to TO leadless which allows excellent electrical performance. It is a best in class technology with a high current rating.
High performance capability
High system reliability
High efficiency and lower EMI
Optimized board utilization
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