Infineon IPP Type N-Channel MOSFET, 121 A, 40 V Enhancement, 3-Pin TO-220 IPP026N04NF2SAKMA1
- RS-stocknr.:
- 260-1060
- Fabrikantnummer:
- IPP026N04NF2SAKMA1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 2 eenheden)*
€ 3,98
(excl. BTW)
€ 4,82
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
Op voorraad
- 966 stuk(s) klaar voor verzending vanaf een andere locatie
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 2 - 18 | € 1,99 | € 3,98 |
| 20 - 48 | € 1,77 | € 3,54 |
| 50 - 98 | € 1,65 | € 3,30 |
| 100 - 198 | € 1,56 | € 3,12 |
| 200 + | € 0,995 | € 1,99 |
*prijsindicatie
- RS-stocknr.:
- 260-1060
- Fabrikantnummer:
- IPP026N04NF2SAKMA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 121A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | IPP | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 2.6mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 68nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 0.88V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 150W | |
| Maximum Operating Temperature | 175°C | |
| Width | 10.67 mm | |
| Height | 4.75mm | |
| Standards/Approvals | IEC 61249-2-21, RoHS | |
| Length | 15.8mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 121A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series IPP | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 2.6mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 68nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 0.88V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 150W | ||
Maximum Operating Temperature 175°C | ||
Width 10.67 mm | ||
Height 4.75mm | ||
Standards/Approvals IEC 61249-2-21, RoHS | ||
Length 15.8mm | ||
Automotive Standard No | ||
The Infineon MOSFET provides an addressing a broad range of applications from low to high switching frequency having a broad availability from distribution partners to excellent price and performance ratio.
High current rating
Industry standard footprint through hole package
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