Infineon IPD N-Channel MOSFET, 50 A, 40 V N TO-252 IPD50N04S4L08ATMA1

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€ 920,00

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  • Verzending vanaf 02 februari 2027
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RS-stocknr.:
259-1553
Fabrikantnummer:
IPD50N04S4L08ATMA1
Fabrikant:
Infineon
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Merk

Infineon

Product Type

MOSFET

Channel Type

N

Maximum Continuous Drain Current Id

50A

Maximum Drain Source Voltage Vds

40V

Package Type

TO-252

Series

IPD

Mount Type

Surface

Maximum Drain Source Resistance Rds

7.30mΩ

Channel Mode

N

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

+175°C

Standards/Approvals

RoHS

Automotive Standard

No

Infineon IPD Series MOSFET, 40V Drain-Source Voltage, 50A Continuous Drain Current - IPD50N04S4L08ATMA1


This MOSFET is a surface-mount N-channel transistor designed for power switching and high-current applications. It operates across an extended temperature range and meets RoHS requirements, making it suitable for deployments where restricted-substances compliance and Compact surface mounting are important.

Features and Benefits:


• 7.3mΩ Rds(on) delivering low conduction losses
• 40V Vds enabling moderate-voltage power switching
• 50A Id providing substantial continuous current capacity
• TO-252 package supporting Compact SMD assembly
• -55°C to 175°C rating allowing wide thermal operation

Applications


• Used with high-current motor drivers
• Suitable for battery management and power rails
• Ideal for DC-DC converter output stages
• Can be used for load switching in harsh environments
• Used for power distribution in Compact electronics

What mounting method does it use?


It is supplied in a TO-252 package configured for surface mounting.

Is the device suitable for automotive qualification?


The component is not specified as meeting automotive standards.

What regulatory compliance does it meet for hazardous substances?


It conforms to RoHS restricted-substances requirements.

What channel type and polarity are provided?


The transistor is an N-channel device with N-channel polarity.

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