Infineon HEXFET Type N-Channel MOSFET, 17 A, 100 V TO-263 IRL530NSTRLPBF
- RS-stocknr.:
- 258-3992
- Artikelnummer Distrelec:
- 304-40-548
- Fabrikantnummer:
- IRL530NSTRLPBF
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 5 eenheden)*
€ 6,81
(excl. BTW)
€ 8,24
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
Op voorraad
- 50 stuk(s) klaar voor verzending vanaf een andere locatie
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 5 - 45 | € 1,362 | € 6,81 |
| 50 - 120 | € 1,226 | € 6,13 |
| 125 - 245 | € 1,146 | € 5,73 |
| 250 - 495 | € 1,062 | € 5,31 |
| 500 + | € 0,994 | € 4,97 |
*prijsindicatie
- RS-stocknr.:
- 258-3992
- Artikelnummer Distrelec:
- 304-40-548
- Fabrikantnummer:
- IRL530NSTRLPBF
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 17A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | HEXFET | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Maximum Drain Source Resistance Rds | 150mΩ | |
| Typical Gate Charge Qg @ Vgs | 22.7nC | |
| Forward Voltage Vf | 1.3V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 3.8W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 17A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series HEXFET | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Maximum Drain Source Resistance Rds 150mΩ | ||
Typical Gate Charge Qg @ Vgs 22.7nC | ||
Forward Voltage Vf 1.3V | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 3.8W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Infineon HEXFET power MOSFET is fifth generation HEXFETs from international rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.
Planar cell structure for wide SOA
Optimized for broadest availability from distribution partners
Product qualification according to JEDEC standard
Silicon optimized for applications switching below <100kHz
Industry standard surface-mount power package
Gerelateerde Links
- Infineon HEXFET Type N-Channel MOSFET, 17 A, 100 V TO-263
- Infineon HEXFET Type N-Channel MOSFET, 17 A, 100 V Enhancement, 3-Pin TO-263
- Infineon HEXFET Type N-Channel MOSFET, 17 A, 100 V Enhancement, 3-Pin TO-263 IRF530NSTRLPBF
- Infineon HEXFET Type N-Channel MOSFET, 180 A, 100 V TO-263
- Infineon HEXFET Type N-Channel MOSFET, 180 A, 100 V TO-263 IRLS4030TRLPBF
- Infineon HEXFET Type N-Channel MOSFET, 45 A, 250 V TO-263
- Infineon HEXFET Type N-Channel MOSFET, 170 A, 75 V TO-263
- Infineon HEXFET Type N-Channel MOSFET, 140 A, 30 V TO-263