Infineon HEXFET Type N-Channel MOSFET, 483 A, 100 V Enhancement TO-247 IRF100P218AKMA1

RS-stocknr.:: 258-3951
Fabrikantnummer:: IRF100P218AKMA1
Fabrikant:: Infineon

Infineon HEXFET Type N-Channel MOSFET, 483 A, 100 V Enhancement TO-247 IRF100P218AKMA1

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RS-stocknr.:: 258-3951
Fabrikantnummer:: IRF100P218AKMA1
Fabrikant:: Infineon

Specificaties

Datasheets

Wetgeving en conformiteit

Productomschrijving

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Alles selecteren	Attribuut	Waarde
	Merk	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	483A
	Maximum Drain Source Voltage Vds	100V
	Series	HEXFET
	Package Type	TO-247
	Mount Type	Surface
	Maximum Drain Source Resistance Rds	1.28mΩ
	Channel Mode	Enhancement
	Forward Voltage Vf	1.2V
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	+175°C
	Standards/Approvals	RoHS
	Automotive Standard	No

	Alles selecteren
	Merk Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 483A
	Maximum Drain Source Voltage Vds 100V
	Series HEXFET
	Package Type TO-247
	Mount Type Surface
	Maximum Drain Source Resistance Rds 1.28mΩ
	Channel Mode Enhancement
	Forward Voltage Vf 1.2V
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature +175°C
	Standards/Approvals RoHS
	Automotive Standard No

Datasheet - IRF100P218AKMA1

Infineon HEXFET Series MOSFET, 100V Maximum Drain‑Source Voltage, 483A Maximum Continuous Drain Current - IRF100P218AKMA1

This MOSFET is a high‑current N‑channel semiconductor device intended for power switching and conversion tasks. It operates across a wide temperature range suitable for demanding environments and is supplied in a TO‑247 package for surface mounting. The device uses enhancement‑mode conduction and meets RoHS requirements.

Features and Benefits:

• 1.28mΩ Rds(on) reduces conduction losses under heavy load
• 100V Vds enables medium‑voltage power applications
• 483A continuous current supports high‑current switching
• -55°C to +175°C range permits industrial temperature operation
• 1.2V forward voltage improves diode conduction efficiency

Applications

• Suitable for motor drive power stages
• Ideal for inverter output switching
• Used with high‑current power supply designs
• Can be used for DC-DC converters in industrial systems
• Suitable for high‑current test benches and load banks

What mounting arrangement does it use?

It is supplied in a TO‑247 package designed for surface mounting.

Which conduction type does the device employ?

The transistor is an enhancement‑mode N‑type channel for controlled switching.

Is it compliant with common hazardous‑substance restrictions?

It carries RoHS approval indicating restricted substances are controlled.

What thermal extremes can it tolerate during operation?

The device is specified to function between -55°C and +175°C.

What is the typical forward voltage during body‑diode conduction?

The forward voltage is specified as 1.2V.