Infineon IPW Type N-Channel MOSFET, 69 A, 650 V, 3-Pin PG-TO-247 IPW65R029CFD7XKSA1
- RS-stocknr.:
- 258-3911
- Fabrikantnummer:
- IPW65R029CFD7XKSA1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Subtotaal (1 eenheid)*
€ 9,15
(excl. BTW)
€ 11,07
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
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Aantal stuks | Per stuk |
|---|---|
| 1 - 4 | € 9,15 |
| 5 - 9 | € 8,68 |
| 10 - 24 | € 8,51 |
| 25 - 49 | € 7,97 |
| 50 + | € 7,40 |
*prijsindicatie
- RS-stocknr.:
- 258-3911
- Fabrikantnummer:
- IPW65R029CFD7XKSA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 69A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | PG-TO-247 | |
| Series | IPW | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 29mΩ | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Maximum Power Dissipation Pd | 305W | |
| Forward Voltage Vf | 1V | |
| Typical Gate Charge Qg @ Vgs | 145nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 69A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type PG-TO-247 | ||
Series IPW | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 29mΩ | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Maximum Power Dissipation Pd 305W | ||
Forward Voltage Vf 1V | ||
Typical Gate Charge Qg @ Vgs 145nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Infineon 650V CoolMOS CFD7 super junction MOSFET in TO-247 package is ideally suited for resonant topologies in industrial applications, such as server, telecom, solar, and EV-charging stations, in which it enables significant efficiency improvements compared to competition. As a successor to the CFD2 SJ MOSFET family, it comes with reduced gate charge, improved turn-off behaviour, and reduced reverse recovery charge enabling highest efficiency and power density as well as additional 50V breakdown voltage.
650V breakdown voltage
Significantly reduced switching losses compared to competition
Lowest RDS(on) dependency over temperature
Excellent hard-commutation ruggedness
Extra safety margin for designs with increased bus voltage
Enabling increased power density
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