Infineon IPL Type N-Channel MOSFET, 24 A, 650 V N TDSON
- RS-stocknr.:
- 258-3886
- Fabrikantnummer:
- IPLK60R360PFD7ATMA1
- Fabrikant:
- Infineon
Subtotaal (1 rol van 5000 eenheden)*
€ 2.250,00
(excl. BTW)
€ 2.700,00
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
Tijdelijk niet op voorraad
- Verzending vanaf 30 oktober 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per rol* |
|---|---|---|
| 5000 + | € 0,45 | € 2.250,00 |
*prijsindicatie
- RS-stocknr.:
- 258-3886
- Fabrikantnummer:
- IPLK60R360PFD7ATMA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 24A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | TDSON | |
| Series | IPL | |
| Mount Type | Surface | |
| Maximum Drain Source Resistance Rds | 2.9mΩ | |
| Channel Mode | N | |
| Forward Voltage Vf | 1.2V | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 24A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type TDSON | ||
Series IPL | ||
Mount Type Surface | ||
Maximum Drain Source Resistance Rds 2.9mΩ | ||
Channel Mode N | ||
Forward Voltage Vf 1.2V | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon 600V CoolMOS PFD7 super junction MOSFET complements the CoolMOS 7 offering for consumer applications. The CoolMOS PFD7 super junction MOSFET in a ThinPAK 5x6 package features RDS(on) of 360mOhm leading to low switching losses. This package is characterized by a very small footprint of 5x6mm² and a very low profile with a height of 1mm. Together with its benchmark low parasitic, these features lead to significantly smaller form factors and help to boost power density. The CoolMOS PFD7 products come with a fast body diode ensuring a robust device and in turn reduced bill-of-material for the customer.
Integrated robust fast body diode
Up to 2kV ESD protection
Excellent commutation ruggedness
Low EMI
BOM cost reduction and easy manufacturing
Robustness and reliability
Easy to select the right parts for design fine-tuning
Gerelateerde Links
- Infineon IPL Type N-Channel MOSFET, 24 A, 650 V N TDSON IPLK60R360PFD7ATMA1
- Infineon IPL MOSFET, 14 A, 650 V TDSON
- Infineon IPL MOSFET, 14 A, 650 V TDSON IPLK60R600PFD7ATMA1
- Infineon IPL Type N-Channel MOSFET, 21 A, 650 V Enhancement, 5-Pin ThinPAK 8x8
- Infineon IPL Type N-Channel MOSFET, 107 A, 650 V Enhancement, 5-Pin ThinPAK 8x8
- Infineon IPL Type N-Channel MOSFET, 29 A, 650 V Enhancement, 5-Pin ThinPAK 8x8
- Infineon IPL Type N-Channel MOSFET, 21 A, 650 V Enhancement, 5-Pin ThinPAK 8x8 IPL65R130CFD7AUMA1
- Infineon IPL Type N-Channel MOSFET, 29 A, 650 V Enhancement, 5-Pin ThinPAK 8x8 IPL65R095CFD7AUMA1
