Infineon MOSFET, 150 A, 1.2 kV AG-EASY1BS-1 FF08MR12W1MA1B11ABPSA1
- RS-stocknr.:
- 258-0847
- Fabrikantnummer:
- FF08MR12W1MA1B11ABPSA1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Bekijk bulkkortingSubtotaal (1 eenheid)*
€ 96,70
(excl. BTW)
€ 117,01
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 90,00
Op voorraad
- Plus verzending 26 stuk(s) vanaf 12 oktober 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk |
|---|---|
| 1 - 1 | € 96,70 |
| 2 - 2 | € 91,86 |
| 3 + | € 88,00 |
*prijsindicatie
- RS-stocknr.:
- 258-0847
- Fabrikantnummer:
- FF08MR12W1MA1B11ABPSA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 150A | |
| Maximum Drain Source Voltage Vds | 1.2kV | |
| Package Type | AG-EASY1BS-1 | |
| Maximum Drain Source Resistance Rds | 9.8mΩ | |
| Forward Voltage Vf | 5.95V | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 150A | ||
Maximum Drain Source Voltage Vds 1.2kV | ||
Package Type AG-EASY1BS-1 | ||
Maximum Drain Source Resistance Rds 9.8mΩ | ||
Forward Voltage Vf 5.95V | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon automotive CoolSiCTM EasyPACKTM1B is a half bridge module which combines the benefits of Infineon robust silicon carbide technology with a very compact and flexible package for hybrid and electric vehicles. The power module implements the new CoolSiCTM automotive MOSFET 1200V Gen1, optimized for high voltage applications like DC/DC converter and auxiliary inverter. The chipset offers benchmark current density, high block voltage and reduced switching losses, which allows compact designs and helps to improve system efficiency, as well as allows a reliable operation under harsh environmental conditions.
Intrinsic diode with low reverse recovery
Low stray inductance 5nH
Blocking voltage 1200V
Low switching losses
Integrated NTC temperature sensor
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