Infineon BSZ Type N-Channel MOSFET, 104 A, 60 V N, 8-Pin TSDSON BSZ037N06LS5ATMA1
- RS-stocknr.:
- 258-0712
- Fabrikantnummer:
- BSZ037N06LS5ATMA1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 2 eenheden)*
€ 4,18
(excl. BTW)
€ 5,06
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
Op voorraad
- 2.400 stuk(s) klaar voor verzending vanaf een andere locatie
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Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 2 - 18 | € 2,09 | € 4,18 |
| 20 - 48 | € 1,685 | € 3,37 |
| 50 - 98 | € 1,58 | € 3,16 |
| 100 - 198 | € 1,48 | € 2,96 |
| 200 + | € 1,38 | € 2,76 |
*prijsindicatie
- RS-stocknr.:
- 258-0712
- Fabrikantnummer:
- BSZ037N06LS5ATMA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 104A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | TSDSON | |
| Series | BSZ | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 5.3mΩ | |
| Channel Mode | N | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 0.8V | |
| Typical Gate Charge Qg @ Vgs | 35nC | |
| Maximum Power Dissipation Pd | 69W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | IEC 61249-2-21, RoHS | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 104A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type TSDSON | ||
Series BSZ | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 5.3mΩ | ||
Channel Mode N | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 0.8V | ||
Typical Gate Charge Qg @ Vgs 35nC | ||
Maximum Power Dissipation Pd 69W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals IEC 61249-2-21, RoHS | ||
Automotive Standard No | ||
The Infineon OptiMOS 5 60V power MOSFET comprises a perfect fit for optimized efficiency and power density solutions such as synchronous rectification in switched mode power supplies, for telecom bricks and server applications, as well as portable chargers. The small footprint of only 3.3x3.3mm2 combined with outstanding electrical performance further contributes towards best-in-class power density and form factor improvement in the end application.
Monolithically integrated Schottky-like diode
Ultra low charges
Ideal for high performance applications
RoHS compliant - halogen free
Less paralleling required
Very low voltage overshoot
Reduced need for snubber circuit
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