Infineon BSC Type N-Channel MOSFET, 68 A, 120 V N, 8-Pin TDSON
- RS-stocknr.:
- 258-0696
- Fabrikantnummer:
- BSC120N12LSGATMA1
- Fabrikant:
- Infineon
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We weten niet of dit item nog op voorraad komt, RS is van plan dit binnenkort uit ons assortiment te halen.
- RS-stocknr.:
- 258-0696
- Fabrikantnummer:
- BSC120N12LSGATMA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 68A | |
| Maximum Drain Source Voltage Vds | 120V | |
| Series | BSC | |
| Package Type | TDSON | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 14.2mΩ | |
| Channel Mode | N | |
| Maximum Power Dissipation Pd | 114W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 51nC | |
| Forward Voltage Vf | 0.87V | |
| Maximum Operating Temperature | 150°C | |
| Width | 6.35 mm | |
| Height | 1.1mm | |
| Standards/Approvals | IEC 61249-2-21, RoHS | |
| Length | 5.49mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 68A | ||
Maximum Drain Source Voltage Vds 120V | ||
Series BSC | ||
Package Type TDSON | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 14.2mΩ | ||
Channel Mode N | ||
Maximum Power Dissipation Pd 114W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 51nC | ||
Forward Voltage Vf 0.87V | ||
Maximum Operating Temperature 150°C | ||
Width 6.35 mm | ||
Height 1.1mm | ||
Standards/Approvals IEC 61249-2-21, RoHS | ||
Length 5.49mm | ||
Automotive Standard No | ||
The Infineon OptiMOS 3 power MOSFETs in logic level are highly suitable for charging, adapter and telecom applications. The devices low gate charge reduces switching losses without compromising conduction losses. Logic level MOSFETs allow operations at high switching frequencies and due to a low gate threshold voltage can be driven directly from microcontrollers.
Low gate charge
Lower output charge
Logic level compatibility
Higher power density designs
Higher switching frequency
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