Infineon HEXFET N-Channel MOSFET, 8.3 A, 30 V Enhancement TSOP-6 IRLTS6342TRPBF

RS-stocknr.:: 257-9466
Fabrikantnummer:: IRLTS6342TRPBF
Fabrikant:: Infineon

Infineon HEXFET N-Channel MOSFET, 8.3 A, 30 V Enhancement TSOP-6 IRLTS6342TRPBF

Subtotaal (1 rol van 3000 eenheden)*

€ 309,00

(excl. BTW)

€ 375,00

(incl. BTW)

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Plus verzending 3.000 stuk(s) vanaf 03 november 2026

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Aantal stuks	Per stuk	Per rol*
3000 +	€ 0,103	€ 309,00

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RS-stocknr.:: 257-9466
Fabrikantnummer:: IRLTS6342TRPBF
Fabrikant:: Infineon

Specificaties

Datasheets

Wetgeving en conformiteit

Productomschrijving

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Alles selecteren	Attribuut	Waarde
	Merk	Infineon
	Product Type	MOSFET
	Channel Type	N
	Maximum Continuous Drain Current Id	8.3A
	Maximum Drain Source Voltage Vds	30V
	Package Type	TSOP-6
	Series	HEXFET
	Mount Type	Through Hole
	Maximum Drain Source Resistance Rds	17.50mΩ
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	2W
	Forward Voltage Vf	1.3V
	Maximum Gate Source Voltage Vgs	12V
	Typical Gate Charge Qg @ Vgs	11nC
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	150°C
	Standards/Approvals	RoHS
	Automotive Standard	No

	Alles selecteren
	Merk Infineon
	Product Type MOSFET
	Channel Type N
	Maximum Continuous Drain Current Id 8.3A
	Maximum Drain Source Voltage Vds 30V
	Package Type TSOP-6
	Series HEXFET
	Mount Type Through Hole
	Maximum Drain Source Resistance Rds 17.50mΩ
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 2W
	Forward Voltage Vf 1.3V
	Maximum Gate Source Voltage Vgs 12V
	Typical Gate Charge Qg @ Vgs 11nC
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 150°C
	Standards/Approvals RoHS
	Automotive Standard No

Datasheet - IRLTS6342TRPBF

Infineon HEXFET Series MOSFET, 30V Maximum Drain-Source Voltage, 8.3A Maximum Continuous Drain Current - IRLTS6342TRPBF

This n-channel transistor is designed to switch and control medium-power loads in through‑hole assemblies. It operates across a wide temperature range and is suitable for designs requiring a low forward drop and modest power dissipation. The device is supplied in a TSOP‑6 through‑hole package and complies with RoHS restrictions.

Features and Benefits:

• 17.50mΩ Rds(on) reduces conduction losses
• 30V Vds enables moderate‑voltage switching
• 8.3A continuous drain current supports high‑current loads
• 2W power dissipation manages thermal stress in confined layouts
• 11nC typical gate charge enables efficient gate driving

Applications

• Suitable for motor driver stages in Compact systems
• Ideal for power management in industrial controls
• Used with gate drivers requiring moderate charge handling
• Can be used for DC switching in instrumentation
• Suitable for prototyping via through‑hole boards

What gate voltage range can be applied safely?

The gate can be driven up to 12V relative to the source.

What temperatures can it tolerate during operation?

It is specified to function from -55°C up to 150°C.

How does its forward voltage affect efficiency?

The device exhibits a forward voltage of 1.3V which affects conduction loss during forward current flow.

Is it intended for automotive applications?

It is not designated as automotive‑grade but conforms to RoHS environmental restrictions.