Infineon HEXFET Type N-Channel MOSFET, -9.2 A, -30 V, 8-Pin SO-8

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Subtotaal (1 rol van 4000 eenheden)*

€ 684,00

(excl. BTW)

€ 828,00

(incl. BTW)

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Laatste voorraad RS
  • Laatste 4.000 stuk(s), klaar voor verzending vanaf een andere locatie
Aantal stuks
Per stuk
Per rol*
4000 - 4000€ 0,171€ 684,00
8000 +€ 0,163€ 652,00

*prijsindicatie

RS-stocknr.:
257-9337
Fabrikantnummer:
IRF9393TRPBF
Fabrikant:
Infineon
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Merk

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

-9.2A

Maximum Drain Source Voltage Vds

-30V

Package Type

SO-8

Series

HEXFET

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

32.5mΩ

Minimum Operating Temperature

-55°C

Forward Voltage Vf

-1.2V

Maximum Gate Source Voltage Vgs

25 V

Typical Gate Charge Qg @ Vgs

14nC

Maximum Power Dissipation Pd

2.5W

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Automotive Standard

No

The Infineon IRF series is the -30V p channel strong IRFET power mosfet in a SO 8 package. The strong IRFET power mosfet family is optimized for low RDS (on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including dc motors, battery management systems, inverters, and dc-dc converters.

Optimized for broadest availability from distribution partners

Product qualification according to JEDEC standard

Industry standard surface mount package

Silicon optimized for applications switching below 100 kHz


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