Infineon HEXFET Type N-Channel MOSFET, 295 A, 40 V, 7-Pin TO-263 IRFS7437TRL7PP
- RS-stocknr.:
- 257-5829
- Fabrikantnummer:
- IRFS7437TRL7PP
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 2 eenheden)*
€ 5,74
(excl. BTW)
€ 6,94
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
Op voorraad
- 784 stuk(s) klaar voor verzending vanaf een andere locatie
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 2 - 18 | € 2,87 | € 5,74 |
| 20 - 48 | € 2,605 | € 5,21 |
| 50 - 98 | € 2,435 | € 4,87 |
| 100 - 198 | € 2,265 | € 4,53 |
| 200 + | € 2,095 | € 4,19 |
*prijsindicatie
- RS-stocknr.:
- 257-5829
- Fabrikantnummer:
- IRFS7437TRL7PP
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 295A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | TO-263 | |
| Series | HEXFET | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 1.1mΩ | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 150nC | |
| Forward Voltage Vf | 1V | |
| Maximum Power Dissipation Pd | 231W | |
| Maximum Operating Temperature | 175°C | |
| Height | 4.83mm | |
| Standards/Approvals | RoHS | |
| Width | 9.65 mm | |
| Length | 10.54mm | |
| Distrelec Product Id | 304-40-544 | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 295A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type TO-263 | ||
Series HEXFET | ||
Mount Type Surface | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 1.1mΩ | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 150nC | ||
Forward Voltage Vf 1V | ||
Maximum Power Dissipation Pd 231W | ||
Maximum Operating Temperature 175°C | ||
Height 4.83mm | ||
Standards/Approvals RoHS | ||
Width 9.65 mm | ||
Length 10.54mm | ||
Distrelec Product Id 304-40-544 | ||
Automotive Standard No | ||
The Infineon strongIRFET power MOSFET family is optimized for low RDS and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.
Optimized for broadest availability from distribution partners
Product qualification according to JEDEC standard
Industry standard surface mount power package
Gerelateerde Links
- Infineon HEXFET Type N-Channel MOSFET, 295 A, 40 V, 7-Pin TO-263
- Infineon HEXFET Type N-Channel MOSFET, 60 V Enhancement, 7-Pin TO-263-7 AUIRLS3036-7P
- Infineon HEXFET Type N-Channel MOSFET, 362 A, 40 V, 7-Pin TO-263
- Infineon HEXFET Type N-Channel MOSFET, 362 A, 40 V, 7-Pin TO-263 IRFS7434TRL7PP
- Infineon HEXFET Type N-Channel MOSFET, 160 A, 40 V Enhancement, 7-Pin TO-263
- Infineon HEXFET Type N-Channel MOSFET, 320 A, 40 V Enhancement, 7-Pin TO-263
- Infineon HEXFET Type N-Channel MOSFET, 557 A, 40 V Enhancement, 7-Pin TO-263
- Infineon HEXFET Type N-Channel MOSFET, 523 A, 40 V Enhancement, 7-Pin TO-263
