Infineon HEXFET Type N-Channel MOSFET, 85 A, 60 V PQFN IRFH7545TRPBF
- RS-stocknr.:
- 257-5818
- Fabrikantnummer:
- IRFH7545TRPBF
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 5 eenheden)*
€ 3,83
(excl. BTW)
€ 4,635
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
Op voorraad
- Plus verzending 2.790 stuk(s) vanaf 05 januari 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 5 - 45 | € 0,766 | € 3,83 |
| 50 - 120 | € 0,672 | € 3,36 |
| 125 - 245 | € 0,634 | € 3,17 |
| 250 - 495 | € 0,496 | € 2,48 |
| 500 + | € 0,382 | € 1,91 |
*prijsindicatie
- RS-stocknr.:
- 257-5818
- Fabrikantnummer:
- IRFH7545TRPBF
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 85A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | HEXFET | |
| Package Type | PQFN | |
| Mount Type | Surface | |
| Maximum Drain Source Resistance Rds | 5.2mΩ | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 83W | |
| Typical Gate Charge Qg @ Vgs | 73nC | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Width | 6 mm | |
| Standards/Approvals | RoHS | |
| Length | 5mm | |
| Height | 1.17mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 85A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series HEXFET | ||
Package Type PQFN | ||
Mount Type Surface | ||
Maximum Drain Source Resistance Rds 5.2mΩ | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 83W | ||
Typical Gate Charge Qg @ Vgs 73nC | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Width 6 mm | ||
Standards/Approvals RoHS | ||
Length 5mm | ||
Height 1.17mm | ||
Automotive Standard No | ||
The Infineon strongIRFET power MOSFET family is optimized for low RDS and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.
Industry standard surface-mount power package
Product qualification according to JEDEC standard
Silicon optimized for applications switching below <100 kHz
Softer body-diode compared to previous silicon generation
Wide portfolio available
Gerelateerde Links
- Infineon HEXFET Type N-Channel MOSFET, 85 A, 60 V PQFN
- Infineon HEXFET Type N-Channel MOSFET, 40 A, 60 V PQFN
- Infineon HEXFET Type N-Channel MOSFET, 40 A, 60 V PQFN IRFH5406TRPBF
- Infineon HEXFET Type N-Channel MOSFET, 100 A, 60 V Enhancement, 8-Pin PQFN
- Infineon HEXFET Type N-Channel MOSFET, 100 A, 60 V Enhancement, 8-Pin PQFN IRFH5006TRPBF
- Infineon HEXFET Type N-Channel MOSFET, 88 A, 100 V PQFN
- Infineon HEXFET Type N-Channel MOSFET, 117 A, 40 V PQFN
- Infineon HEXFET Type N-Channel MOSFET, 3.2 A, 100 V PQFN