Infineon HEXFET Type N-Channel MOSFET, 21 A, 25 V, 6-Pin PQFN IRFHS8242TRPBF
- RS-stocknr.:
- 257-5793
- Artikelnummer Distrelec:
- 304-40-531
- Fabrikantnummer:
- IRFHS8242TRPBF
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 25 eenheden)*
€ 11,90
(excl. BTW)
€ 14,40
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
Op voorraad
- Plus verzending 6.825 stuk(s) vanaf 19 januari 2026
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Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 25 - 100 | € 0,476 | € 11,90 |
| 125 - 225 | € 0,452 | € 11,30 |
| 250 - 600 | € 0,405 | € 10,13 |
| 625 - 1225 | € 0,334 | € 8,35 |
| 1250 + | € 0,214 | € 5,35 |
*prijsindicatie
- RS-stocknr.:
- 257-5793
- Artikelnummer Distrelec:
- 304-40-531
- Fabrikantnummer:
- IRFHS8242TRPBF
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 21A | |
| Maximum Drain Source Voltage Vds | 25V | |
| Series | HEXFET | |
| Package Type | PQFN | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 13mΩ | |
| Maximum Power Dissipation Pd | 2.1W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 4.3nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 1V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Width | 2 mm | |
| Height | 0.9mm | |
| Length | 2mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 21A | ||
Maximum Drain Source Voltage Vds 25V | ||
Series HEXFET | ||
Package Type PQFN | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 13mΩ | ||
Maximum Power Dissipation Pd 2.1W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 4.3nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 1V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Width 2 mm | ||
Height 0.9mm | ||
Length 2mm | ||
Automotive Standard No | ||
The Infineon strongIRFET power MOSFET family is optimized for low RDS and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.
Low RDSon (< 58 m)
Low thermal resistance to PCB (<12°C/W)
100% Rg tested
Low profile (<09 mm)
Industry-standard pinout
Compatible with existing surface mount techniques
RoHS compliant containing no lead, no bromide and no halogen environmentally
MSL1, industrial qualification
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