DiodesZetex DMP Type P-Channel MOSFET, 10.7 A, 12 V Enhancement, 3-Pin X1-DFN1006-3 DMP2900UFB-7B
- RS-stocknr.:
- 254-8624
- Fabrikantnummer:
- DMP2900UFB-7B
- Fabrikant:
- DiodesZetex
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 25 eenheden)*
€ 5,025
(excl. BTW)
€ 6,075
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
Op voorraad
- Plus verzending 9.500 stuk(s) vanaf 19 januari 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 25 - 475 | € 0,201 | € 5,03 |
| 500 - 975 | € 0,072 | € 1,80 |
| 1000 - 2475 | € 0,052 | € 1,30 |
| 2500 - 4975 | € 0,051 | € 1,28 |
| 5000 + | € 0,05 | € 1,25 |
*prijsindicatie
- RS-stocknr.:
- 254-8624
- Fabrikantnummer:
- DMP2900UFB-7B
- Fabrikant:
- DiodesZetex
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | DiodesZetex | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 10.7A | |
| Maximum Drain Source Voltage Vds | 12V | |
| Series | DMP | |
| Package Type | X1-DFN1006-3 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 41mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 8 V | |
| Typical Gate Charge Qg @ Vgs | 123nC | |
| Forward Voltage Vf | 1.2V | |
| Maximum Power Dissipation Pd | 1.73W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Length | 1.07mm | |
| Height | 5.3mm | |
| Standards/Approvals | No | |
| Width | 0.67 mm | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk DiodesZetex | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 10.7A | ||
Maximum Drain Source Voltage Vds 12V | ||
Series DMP | ||
Package Type X1-DFN1006-3 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 41mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 8 V | ||
Typical Gate Charge Qg @ Vgs 123nC | ||
Forward Voltage Vf 1.2V | ||
Maximum Power Dissipation Pd 1.73W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Length 1.07mm | ||
Height 5.3mm | ||
Standards/Approvals No | ||
Width 0.67 mm | ||
Automotive Standard AEC-Q101 | ||
The DiodeZetex P channel enhancement mode MOSFET has been designed to minimize the on-state resistance yet maintain superior switching performance, making it ideal for high efficiency power management applications. It is applicable in load switches and po
Low on resistance
Fast switching speed
Halogen and antimony Free
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