DiodesZetex DMN2040U Type N-Channel MOSFET, 6 A, 20 V Enhancement, 3-Pin SOT-23 DMN2055UQ-7
- RS-stocknr.:
- 254-8602
- Fabrikantnummer:
- DMN2055UQ-7
- Fabrikant:
- DiodesZetex
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 25 eenheden)*
€ 1,675
(excl. BTW)
€ 2,025
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
Op voorraad
- 2.900 stuk(s) klaar voor verzending vanaf een andere locatie
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 25 - 25 | € 0,067 | € 1,68 |
| 50 - 75 | € 0,065 | € 1,63 |
| 100 - 225 | € 0,064 | € 1,60 |
| 250 - 975 | € 0,062 | € 1,55 |
| 1000 + | € 0,061 | € 1,53 |
*prijsindicatie
- RS-stocknr.:
- 254-8602
- Fabrikantnummer:
- DMN2055UQ-7
- Fabrikant:
- DiodesZetex
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | DiodesZetex | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 6A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Series | DMN2040U | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 33mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 7.5nC | |
| Forward Voltage Vf | 1.2V | |
| Maximum Power Dissipation Pd | 1.36W | |
| Maximum Gate Source Voltage Vgs | 12 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 3mm | |
| Width | 1.4 mm | |
| Height | 1mm | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk DiodesZetex | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 6A | ||
Maximum Drain Source Voltage Vds 20V | ||
Series DMN2040U | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 33mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 7.5nC | ||
Forward Voltage Vf 1.2V | ||
Maximum Power Dissipation Pd 1.36W | ||
Maximum Gate Source Voltage Vgs 12 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 3mm | ||
Width 1.4 mm | ||
Height 1mm | ||
Automotive Standard AEC-Q101 | ||
The DiodeZetex enhancement mode MOSFET has been designed to minimize the on-state resistance yet maintain superior switching performance, making it ideal for high efficiency power management applications. It is applicable in general purpose interfacing sw
Low on resistance
Low input capacitance
ESD protected gate
Halogen and antimony Free
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