Vishay TrenchFET Gen IV Type N-Channel MOSFET, 245 A, 30 V Enhancement, 4-Pin PowerPAK (8x8L) SQJQ186E-T1_GE3
- RS-stocknr.:
- 252-0316
- Fabrikantnummer:
- SQJQ186E-T1_GE3
- Fabrikant:
- Vishay
Bulkkorting beschikbaar
Bekijk bulkkortingSubtotaal (1 verpakking van 2 eenheden)*
€ 6,65
(excl. BTW)
€ 8,046
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 90,00
Tekort aan aanbod
Wegens beperkingen in de bevoorradingsketen worden de voorraden toegewezen naarmate zij beschikbaar komen.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 2 - 18 | € 3,325 | € 6,65 |
| 20 - 98 | € 3,13 | € 6,26 |
| 100 - 198 | € 2,825 | € 5,65 |
| 200 - 498 | € 2,665 | € 5,33 |
| 500 + | € 2,495 | € 4,99 |
*prijsindicatie
- RS-stocknr.:
- 252-0316
- Fabrikantnummer:
- SQJQ186E-T1_GE3
- Fabrikant:
- Vishay
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 245A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | PowerPAK (8x8L) | |
| Series | TrenchFET Gen IV | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 0.0014mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 43nC | |
| Maximum Power Dissipation Pd | 214W | |
| Forward Voltage Vf | 1.1V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Length | 6.15mm | |
| Height | 1.9mm | |
| Standards/Approvals | AEC-Q101 | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 245A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type PowerPAK (8x8L) | ||
Series TrenchFET Gen IV | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 0.0014mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 43nC | ||
Maximum Power Dissipation Pd 214W | ||
Forward Voltage Vf 1.1V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Length 6.15mm | ||
Height 1.9mm | ||
Standards/Approvals AEC-Q101 | ||
Automotive Standard AEC-Q101 | ||
The Vishay automotive MOSFETs are manufactured on a dedicated process flow to in still ruggedness. Rated for a maximum junction temperature of 175 °C, the vishay siliconix AEC-Q101 qualified SQ series features low on-resistance n- and p-channel trench FET technologies in lead (Pb)- and halogen-free SO packages.
TrenchFET Gen IV power MOSFET
AEC-Q101 qualified
100 % Rg and UIS tested
Thin 1.9 mm height
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