Vishay Symmetric Dual N Channel 2 Type N-Channel MOSFET, 159 A, 40 V, 8-Pin PowerPAIR 6 x 5FS

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Subtotaal (1 rol van 3000 eenheden)*

€ 3.174,00

(excl. BTW)

€ 3.840,00

(incl. BTW)

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  • Plus verzending 3.000 stuk(s) vanaf 05 januari 2026
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RS-stocknr.:
252-0296
Fabrikantnummer:
SIZF640DT-T1-GE3
Fabrikant:
Vishay
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Merk

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

159A

Maximum Drain Source Voltage Vds

40V

Package Type

PowerPAIR 6 x 5FS

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.00137Ω

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

30nC

Maximum Power Dissipation Pd

62.5W

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Transistor Configuration

Symmetric Dual N Channel

Standards/Approvals

No

Number of Elements per Chip

2

Automotive Standard

No

The Vishay siliconix MOSFET product line includes a diverse range of advanced technologies. MOSFETs are transistor devices which are controlled by a capacitor. The field effect means that they are controlled by voltage. N-Channel MOSFETs contain additional electrons which are free to move around. They are a more popular channel type. N-Channel MOSFETs work when a positive charge is applied to the gate terminal.

TrenchFET Gen IV power MOSFET

100 % Rg and UIS tested

Symmetric dual N-channel

Flip chip technology optimal thermal design

High side and low side MOSFETs form optimized

Combination for 50 % duty cycle

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