Infineon IPW Type P-Channel MOSFET, 60 A, 40 V Enhancement, 3-Pin TO-247 IPW65R060CFD7XKSA1
- RS-stocknr.:
- 250-0597
- Fabrikantnummer:
- IPW65R060CFD7XKSA1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Bekijk bulkkortingSubtotaal (1 tube van 30 eenheden)*
€ 139,02
(excl. BTW)
€ 168,21
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 90,00
Op voorraad
- Plus verzending 90 stuk(s) vanaf 12 oktober 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per tube* |
|---|---|---|
| 30 - 30 | € 4,634 | € 139,02 |
| 60 - 120 | € 4,402 | € 132,06 |
| 150 + | € 4,216 | € 126,48 |
*prijsindicatie
- RS-stocknr.:
- 250-0597
- Fabrikantnummer:
- IPW65R060CFD7XKSA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 60A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | TO-247 | |
| Series | IPW | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1.7mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Maximum Power Dissipation Pd | 81W | |
| Forward Voltage Vf | 1V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 60A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type TO-247 | ||
Series IPW | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1.7mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Maximum Power Dissipation Pd 81W | ||
Forward Voltage Vf 1V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
The Infineon 650V CoolMOS CFD7 extends the voltage class offering of the CFD7 family and is a success or to the 650V CoolMOS CFD2. Resulting from improved switching performance and excellent thermal behaviour. It offers highest efficiency in resonant switching topologies, such as LLC and phase-shift-full-bridge(ZVS). As part of Infineon’s fast body diode portfolio, this new product series blends all advantages of a fast switching technology together with superior hard commutation robustness. The technology meets highest efficiency and reliability standards and furthermore supports high power density solutions.
Excellent hard commutation ruggedness
Extra safety margin for designs with increased bus voltage
Outstanding light load efficiency in industrial SMPS applications
Improved full load efficiency in industrial SMPS applications
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