Infineon IPT Type N-Channel MOSFET, 400 A, 40 V Enhancement, 8-Pin HSOF-8
- RS-stocknr.:
- 250-0594
- Fabrikantnummer:
- IPT60R055CFD7XTMA1
- Fabrikant:
- Infineon
Subtotaal (1 rol van 2000 eenheden)*
€ 6.404,00
(excl. BTW)
€ 7.748,00
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
Tijdelijk niet op voorraad
- Verzending vanaf 28 mei 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per rol* |
|---|---|---|
| 2000 + | € 3,202 | € 6.404,00 |
*prijsindicatie
- RS-stocknr.:
- 250-0594
- Fabrikantnummer:
- IPT60R055CFD7XTMA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 400A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | HSOF-8 | |
| Series | IPT | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 1.7mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 81W | |
| Forward Voltage Vf | 1V | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 400A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type HSOF-8 | ||
Series IPT | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 1.7mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 81W | ||
Forward Voltage Vf 1V | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
The Infineon CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction (SJ) principle and pioneered by Infineon technologies. The latest CoolMOS CFD7 is the successor to the CoolMOS CFD2 series and is an optimized platform tailored to target soft switching applications such as phase shift full-bridge (ZVS) and LLC resulting from reduced gate charge(Qg), best-in-class reverse recovery charge (Qrr) and improved turn off behaviour CoolMOS CFD7 offers highest efficiency in resonant topologies.
Best-in-class RDS(on) in SMD and THD packages
Excellent hard commutation ruggedness
Highest reliability for resonant topologies
Highest efficiency with outstanding ease-of-use / performance trade-off
Gerelateerde Links
- Infineon IPT Type N-Channel MOSFET, 400 A, 40 V Enhancement, 8-Pin HSOF-8 IPT60R055CFD7XTMA1
- Infineon IPT Type N-Channel MOSFET, 400 A, 40 V, 8-Pin HSOF-8
- Infineon IPT Type N-Channel MOSFET, 400 A, 40 V, 8-Pin HSOF-8 IPT60R040S7XTMA1
- Infineon IPT Type N-Channel MOSFET, 143 A, 150 V Enhancement, 8-Pin HSOF-8
- Infineon IPT Type N-Channel MOSFET, 122 A, 150 V Enhancement, 8-Pin HSOF-8
- Infineon IPT Type N-Channel MOSFET, 174 A, 150 V Enhancement, 8-Pin HSOF-8
- Infineon IPT Type N-Channel MOSFET, 190 A, 150 V Enhancement, 8-Pin HSOF-8
- Infineon IPT Type N-Channel MOSFET, 174 A, 150 V Enhancement, 8-Pin HSOF-8 IPT044N15N5ATMA1