Infineon Half Bridge OptiMOS-TM6 Type N-Channel Power MOSFET, 60 A, 40 V N, 8-Pin SuperSO8 5 x 6 IAUC60N04S6L030HATMA1
- RS-stocknr.:
- 249-6889
- Fabrikantnummer:
- IAUC60N04S6L030HATMA1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 2 eenheden)*
€ 2,22
(excl. BTW)
€ 2,68
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
Laatste voorraad RS
- Laatste 776 stuk(s), klaar voor verzending vanaf een andere locatie
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 2 - 18 | € 1,11 | € 2,22 |
| 20 - 48 | € 0,985 | € 1,97 |
| 50 - 98 | € 0,92 | € 1,84 |
| 100 - 198 | € 0,895 | € 1,79 |
| 200 + | € 0,88 | € 1,76 |
*prijsindicatie
- RS-stocknr.:
- 249-6889
- Fabrikantnummer:
- IAUC60N04S6L030HATMA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Channel Type | Type N | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 60A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | OptiMOS-TM6 | |
| Package Type | SuperSO8 5 x 6 | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 3mΩ | |
| Channel Mode | N | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 27nC | |
| Maximum Power Dissipation Pd | 75W | |
| Maximum Gate Source Voltage Vgs | 16 V | |
| Forward Voltage Vf | 1.1V | |
| Transistor Configuration | Half Bridge | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Channel Type Type N | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 60A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series OptiMOS-TM6 | ||
Package Type SuperSO8 5 x 6 | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 3mΩ | ||
Channel Mode N | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 27nC | ||
Maximum Power Dissipation Pd 75W | ||
Maximum Gate Source Voltage Vgs 16 V | ||
Forward Voltage Vf 1.1V | ||
Transistor Configuration Half Bridge | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
The Infineon OptiMOS is power MOSFET for automotive applications. Operating channel is N. It is AEC Q101 qualified. MSL1 up to 260°C peak reflow. Green Product (RoHS compliant) and it is 100% Avalanche tested.
175°C operating temperature
Gerelateerde Links
- Infineon Half Bridge OptiMOS-TM6 Type N-Channel Power MOSFET, 60 A, 40 V N, 8-Pin SuperSO8 5 x 6
- Infineon Half Bridge OptiMOS-TM6 Type N-Channel Power MOSFET, 60 A, 40 V Enhancement, 8-Pin SuperSO8 5 x 6
- Infineon Half Bridge IAUC45N04S6L063H Type N-Channel MOSFET, 45 A, 40 V Enhancement, 8-Pin SuperSO8 5 x 6
- Infineon Half Bridge OptiMOSTM Type N-Channel Power Transistor, 45 A, 40 V Enhancement, 8-Pin SuperSO8 5 x 6
- Infineon Half Bridge IAUC60N04S6N050H Type N-Channel Power Transistor, 60 A, 40 V Enhancement, 8-Pin SuperSO8 5 x 6
- Infineon OptiMOS-TM6 Type N-Channel MOSFET, 39 A, 200 V Enhancement, 3-Pin PG-TO263-3 IPB339N20NM6ATMA1
- Infineon OptiMOS-TM6 Type N-Channel MOSFET, 134 A, 200 V Enhancement, 3-Pin PG-TO263-3 IPB068N20NM6ATMA1
- Infineon OptiMOS-TM6 Type N-Channel MOSFET, 656 A, 40 V Enhancement, 12-Pin PG-TSON-12 IQFH36N04NM6ATMA1