Infineon IMBG Type N-Channel MOSFET, 64 A, 75 V N, 7-Pin TO-263 IMBG65R030M1HXTMA1
- RS-stocknr.:
- 248-9313
- Fabrikantnummer:
- IMBG65R030M1HXTMA1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Subtotaal (1 eenheid)*
€ 12,95
(excl. BTW)
€ 15,67
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
Op voorraad
- Plus verzending 1.000 stuk(s) vanaf 16 januari 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk |
|---|---|
| 1 - 4 | € 12,95 |
| 5 - 9 | € 12,31 |
| 10 - 24 | € 11,78 |
| 25 - 49 | € 11,27 |
| 50 + | € 10,49 |
*prijsindicatie
- RS-stocknr.:
- 248-9313
- Fabrikantnummer:
- IMBG65R030M1HXTMA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 64A | |
| Maximum Drain Source Voltage Vds | 75V | |
| Package Type | TO-263 | |
| Series | IMBG | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 3mΩ | |
| Channel Mode | N | |
| Forward Voltage Vf | 1.3V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Maximum Power Dissipation Pd | 81W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 64A | ||
Maximum Drain Source Voltage Vds 75V | ||
Package Type TO-263 | ||
Series IMBG | ||
Mount Type Surface | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 3mΩ | ||
Channel Mode N | ||
Forward Voltage Vf 1.3V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Maximum Power Dissipation Pd 81W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Infineon SiC MOSFET is a 650 V CoolSiC is built over the solid silicon carbide technology, leveraging the wide bandgap SiC material characteristics, the 650 V CoolSiC MOSFET offers a unique combination of performance, reliability and ease of use, suitable for high temperature and harsh operations, it enables the simplified and cost effective deployment of the highest system efficiency.
Optimized switching behaviour at higher currents
Commutation robust fast body diode with low Qf
Superior gate oxide reliability
Tj,max-175°C and excellent thermal behaviour
Lower RDS(on) and pulse current dependency on temperature
Increased avalanche capability
Compatible with standard drivers
Kelvin source provides upto 4 times lower switching losses
Gerelateerde Links
- Infineon IMBG Type N-Channel MOSFET, 64 A, 75 V N, 7-Pin TO-263
- Infineon IMBG Type N-Channel MOSFET, 64 A, 75 V N, 7-Pin TO-263 IMBG65R022M1HXTMA1
- Infineon IMBG Type N-Channel MOSFET, 64 A, 75 V N, 7-Pin TO-263 IMBG65R072M1HXTMA1
- Infineon IMBG Type N-Channel MOSFET, 64 A, 75 V N, 7-Pin TO-263 IMBG65R083M1HXTMA1
- Infineon IMBG Type N-Channel MOSFET, 64 A, 75 V N, 7-Pin TO-263 IMBG65R163M1HXTMA1
- Infineon IMBG Type N-Channel MOSFET, 64 A, 75 V N, 7-Pin TO-263 IMBG65R107M1HXTMA1
- Infineon IMBG Type N-Channel MOSFET, 64 A, 75 V N, 7-Pin TO-263 IMBG65R048M1HXTMA1
- Infineon IMBG Type N-Channel MOSFET, 64 A, 75 V N, 7-Pin TO-263 IMBG65R057M1HXTMA1