Fabrikantnummer

Wolfspeed Type N-Channel MOSFET, 10.7 A, 1200 V Enhancement, 4-Pin TO-247

RS-stocknr.:: 248-8925P
Fabrikantnummer:: C3M0021120K
Fabrikant:: Wolfspeed

Wolfspeed Type N-Channel MOSFET, 10.7 A, 1200 V Enhancement, 4-Pin TO-247

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We weten niet of dit item nog op voorraad komt, RS is van plan dit binnenkort uit ons assortiment te halen.

RS-stocknr.:: 248-8925P
Fabrikantnummer:: C3M0021120K
Fabrikant:: Wolfspeed

Specificaties

Datasheets

Wetgeving en conformiteit

Productomschrijving

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Alles selecteren	Attribuut	Waarde
	Merk	Wolfspeed
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	10.7A
	Maximum Drain Source Voltage Vds	1200V
	Package Type	TO-247
	Mount Type	Through Hole
	Pin Count	4
	Maximum Drain Source Resistance Rds	21mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	469W
	Typical Gate Charge Qg @ Vgs	162nC
	Forward Voltage Vf	1.2V
	Maximum Gate Source Voltage Vgs	15V
	Maximum Operating Temperature	175°C
	Height	5.21mm
	Width	16.13mm
	Standards/Approvals	No
	Length	23.63mm
	Automotive Standard	No

	Alles selecteren
	Merk Wolfspeed
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 10.7A
	Maximum Drain Source Voltage Vds 1200V
	Package Type TO-247
	Mount Type Through Hole
	Pin Count 4
	Maximum Drain Source Resistance Rds 21mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 469W
	Typical Gate Charge Qg @ Vgs 162nC
	Forward Voltage Vf 1.2V
	Maximum Gate Source Voltage Vgs 15V
	Maximum Operating Temperature 175°C
	Height 5.21mm
	Width 16.13mm
	Standards/Approvals No
	Length 23.63mm
	Automotive Standard No

Datasheet - C3M0021120K

The Wolfspeed Silicon Carbide Power MOSFET C3MTM MOSFET Technology is in N-Channel Enhancement Mode. The Wolfspeed Z-Fet™, C2M™ & C3M™ Silicon Carbide Power MOSFETs is a range of second generation SiC MOSFETs from Cree's power division Wolfspeed which deliver industry-leading power density and switching efficiency. These low-capacitance devices allow higher switching frequencies and have reduced cooling requirements improving overall system operating efficiency

3rd generation SiC MOSFET technology

Low impedance package with driver source pin

8mm of creepage distance between drain and source

High blocking voltage with low on-resistance

High-speed switching with low capacitances

Fast intrinsic diode with low reverse recovery (Qrr)

Halogen free, RoHS compliant

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