STMicroelectronics STL Type N-Channel MOSFET, 55 A, 12 V Enhancement, 8-Pin PowerFLAT STL325N4LF8AG
- RS-stocknr.:
- 248-4901
- Fabrikantnummer:
- STL325N4LF8AG
- Fabrikant:
- STMicroelectronics
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 2 eenheden)*
€ 4,69
(excl. BTW)
€ 5,674
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
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- Plus verzending 2.810 stuk(s) vanaf 21 januari 2026
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Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 2 - 8 | € 2,345 | € 4,69 |
| 10 - 18 | € 2,23 | € 4,46 |
| 20 - 48 | € 2,005 | € 4,01 |
| 50 - 98 | € 1,80 | € 3,60 |
| 100 + | € 1,715 | € 3,43 |
*prijsindicatie
- RS-stocknr.:
- 248-4901
- Fabrikantnummer:
- STL325N4LF8AG
- Fabrikant:
- STMicroelectronics
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | STMicroelectronics | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 55A | |
| Maximum Drain Source Voltage Vds | 12V | |
| Package Type | PowerFLAT | |
| Series | STL | |
| Mount Type | Through Hole | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 45mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 188W | |
| Forward Voltage Vf | 1.5V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 41nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Height | 1mm | |
| Standards/Approvals | UL | |
| Length | 6mm | |
| Width | 4.9 mm | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk STMicroelectronics | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 55A | ||
Maximum Drain Source Voltage Vds 12V | ||
Package Type PowerFLAT | ||
Series STL | ||
Mount Type Through Hole | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 45mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 188W | ||
Forward Voltage Vf 1.5V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 41nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Height 1mm | ||
Standards/Approvals UL | ||
Length 6mm | ||
Width 4.9 mm | ||
Automotive Standard AEC-Q101 | ||
The STMicroelectronics product is a N channel Power MOSFET that utilizes STripFET F8 technology featuring an enhanced trench gate structure. It ensures very low on state resistance while reducing internal capacitances and gate charge for faster and more efficient switching.
Used for switching applications
MSL1 grade
AEC-Q101 qualified
175 degree C operating temperature
100 percent avalanche tested
Wettable flank package
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