DiodesZetex DMP65H Type P-Channel MOSFET, 10.7 A, 12 V Enhancement, 8-Pin SOIC DMP65H13D0HSS-13
- RS-stocknr.:
- 246-7533
- Fabrikantnummer:
- DMP65H13D0HSS-13
- Fabrikant:
- DiodesZetex
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 10 eenheden)*
€ 13,00
(excl. BTW)
€ 15,70
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
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Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 10 - 40 | € 1,30 | € 13,00 |
| 50 - 90 | € 1,274 | € 12,74 |
| 100 - 490 | € 1,01 | € 10,10 |
| 500 + | € 0,894 | € 8,94 |
*prijsindicatie
- RS-stocknr.:
- 246-7533
- Fabrikantnummer:
- DMP65H13D0HSS-13
- Fabrikant:
- DiodesZetex
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | DiodesZetex | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 10.7A | |
| Maximum Drain Source Voltage Vds | 12V | |
| Package Type | SOIC | |
| Series | DMP65H | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 41mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 1.73W | |
| Maximum Gate Source Voltage Vgs | 8 V | |
| Typical Gate Charge Qg @ Vgs | 13.4nC | |
| Maximum Operating Temperature | 175°C | |
| Length | 4.9mm | |
| Height | 6mm | |
| Width | 1.45 mm | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk DiodesZetex | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 10.7A | ||
Maximum Drain Source Voltage Vds 12V | ||
Package Type SOIC | ||
Series DMP65H | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 41mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 1.73W | ||
Maximum Gate Source Voltage Vgs 8 V | ||
Typical Gate Charge Qg @ Vgs 13.4nC | ||
Maximum Operating Temperature 175°C | ||
Length 4.9mm | ||
Height 6mm | ||
Width 1.45 mm | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
The DiodesZetex makes MOSFET which are designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications. It is a green device and, totally Lead, halogen and Antimony free. This MOSFET comes in SO-8 packaging. It offers fast switching and high efficiency.
Maximum drain to source voltage is 600 V and maximum gate to source voltage is ±30 V It offers low on-resistance It has high BVDSS rating for power application It offers low input capacitance
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