DiodesZetex 2 Type N-Channel MOSFET, 20 V Enhancement, 6-Pin SOT-363 DMN2710UDW-7
- RS-stocknr.:
- 246-7513
- Fabrikantnummer:
- DMN2710UDW-7
- Fabrikant:
- DiodesZetex
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 25 eenheden)*
€ 4,45
(excl. BTW)
€ 5,375
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
Op voorraad
- 2.825 stuk(s) klaar voor verzending vanaf een andere locatie
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 25 - 25 | € 0,178 | € 4,45 |
| 50 - 75 | € 0,174 | € 4,35 |
| 100 - 225 | € 0,128 | € 3,20 |
| 250 - 975 | € 0,126 | € 3,15 |
| 1000 + | € 0,122 | € 3,05 |
*prijsindicatie
- RS-stocknr.:
- 246-7513
- Fabrikantnummer:
- DMN2710UDW-7
- Fabrikant:
- DiodesZetex
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | DiodesZetex | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Drain Source Voltage Vds | 20V | |
| Package Type | SOT-363 | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 0.75Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 0.6nC | |
| Maximum Power Dissipation Pd | 0.36W | |
| Maximum Gate Source Voltage Vgs | 6 V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk DiodesZetex | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Drain Source Voltage Vds 20V | ||
Package Type SOT-363 | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 0.75Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 0.6nC | ||
Maximum Power Dissipation Pd 0.36W | ||
Maximum Gate Source Voltage Vgs 6 V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
The DiodesZetex makes an N-channel enhancement mode MOSFET, designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications. It is a green device and, totally Lead, halogen and Antimony free. This MOSFET comes in SOT363 packaging. It offers fast switching and high efficiency. Its 100% unclamped inductive switching ensures more reliable and robust end application.
Maximum drain to source voltage is 20 V and Maximum gate to source voltage is ±6 V It offers a ultra-small package size It has low input/output leakage
Gerelateerde Links
- DiodesZetex 2 Type N-Channel MOSFET, 20 V Enhancement, 6-Pin SOT-363
- DiodesZetex Dual 2 Type N-Channel MOSFET, 60 V Enhancement, 6-Pin SOT-363 DMN61D9UDWQ-7
- DiodesZetex Dual 2 Type N-Channel MOSFET, 60 V Enhancement, 6-Pin SOT-363
- DiodesZetex Dual DMN Type N-Channel MOSFET, 217 mA, 60 V Enhancement, 6-Pin SOT-363 DMN66D0LDWQ-7
- DiodesZetex Dual DMN Type N-Channel MOSFET, 800 mA, 30 V Enhancement, 6-Pin SOT-363 DMN3401LDWQ-7
- DiodesZetex Dual 2N7002 Type N-Channel MOSFET, 261 mA, 60 V Enhancement, 6-Pin SOT-363 2N7002DWK-7
- DiodesZetex Dual DMN Type N-Channel MOSFET, 261 mA, 60 V Enhancement, 6-Pin SOT-363 DMN62D4LDW-7
- DiodesZetex Dual DMN Type N-Channel MOSFET, 250 mA, 30 V Enhancement, 6-Pin SOT-363 DMN33D8LDWQ-7
